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| 001 | 614020 | ||
| 005 | 20250416150425.0 | ||
| 024 | 7 | _ | |a arXiv:2409.00200 |2 arXiv |
| 037 | _ | _ | |a PUBDB-2024-05721 |
| 041 | _ | _ | |a English |
| 088 | _ | _ | |a arXiv:2409.00200 |2 arXiv |
| 100 | 1 | _ | |a Khaliq, Ahmar |0 P:(DE-H253)PIP1106405 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Measurements of dislocations in 4H-SiC with rocking curve imaging |
| 260 | _ | _ | |c 2024 |
| 336 | 7 | _ | |a Preprint |b preprint |m preprint |0 PUB:(DE-HGF)25 |s 1741703708_3771647 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a WORKING_PAPER |2 ORCID |
| 336 | 7 | _ | |a Electronic Article |0 28 |2 EndNote |
| 336 | 7 | _ | |a preprint |2 DRIVER |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a Output Types/Working Paper |2 DataCite |
| 520 | _ | _ | |a 4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes. |
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| 700 | 1 | _ | |a Wittwer, Felix |0 P:(DE-H253)PIP1020829 |b 1 |
| 700 | 1 | _ | |a Pyrlik, Niklas |0 P:(DE-H253)PIP1093068 |b 2 |
| 700 | 1 | _ | |a Fevola, Giovanni |0 P:(DE-H253)PIP1081911 |b 3 |
| 700 | 1 | _ | |a Patjens, Svenja |0 P:(DE-H253)PIP1018558 |b 4 |
| 700 | 1 | _ | |a Barp, Jackson |0 P:(DE-H253)PIP1089816 |b 5 |
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| 700 | 1 | _ | |a Stückelberger, Michael |0 P:(DE-H253)PIP1081708 |b 8 |
| 700 | 1 | _ | |a Garrevoet, Jan |0 P:(DE-H253)PIP1013228 |b 9 |
| 700 | 1 | _ | |a Brueckner, Dennis Bjoern |0 P:(DE-H253)PIP1021825 |b 10 |
| 700 | 1 | _ | |a Modregger, Peter |0 P:(DE-H253)PIP1088525 |b 11 |e Corresponding author |
| 856 | 4 | _ | |u https://bib-pubdb1.desy.de/record/614020/files/2409.00200v1.pdf |y Restricted |
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| 914 | 1 | _ | |y 2024 |
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| 980 | _ | _ | |a preprint |
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| 980 | _ | _ | |a UNRESTRICTED |
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