TY  - EJOUR
AU  - Khaliq, Ahmar
AU  - Wittwer, Felix
AU  - Pyrlik, Niklas
AU  - Fevola, Giovanni
AU  - Patjens, Svenja
AU  - Barp, Jackson
AU  - Falkenberg, Gero
AU  - Hampel, Sven
AU  - Stückelberger, Michael
AU  - Garrevoet, Jan
AU  - Brueckner, Dennis Bjoern
AU  - Modregger, Peter
TI  - Measurements of dislocations in 4H-SiC with rocking curve imaging
IS  - arXiv:2409.00200
M1  - PUBDB-2024-05721
M1  - arXiv:2409.00200
PY  - 2024
AB  - 4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.
LB  - PUB:(DE-HGF)25
UR  - https://bib-pubdb1.desy.de/record/614020
ER  -