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000614020 0247_ $$2arXiv$$aarXiv:2409.00200
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000614020 088__ $$2arXiv$$aarXiv:2409.00200
000614020 1001_ $$0P:(DE-H253)PIP1106405$$aKhaliq, Ahmar$$b0$$eCorresponding author
000614020 245__ $$aMeasurements of dislocations in 4H-SiC with rocking curve imaging
000614020 260__ $$c2024
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000614020 520__ $$a4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.
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000614020 7001_ $$0P:(DE-H253)PIP1020829$$aWittwer, Felix$$b1
000614020 7001_ $$0P:(DE-H253)PIP1093068$$aPyrlik, Niklas$$b2
000614020 7001_ $$0P:(DE-H253)PIP1081911$$aFevola, Giovanni$$b3
000614020 7001_ $$0P:(DE-H253)PIP1018558$$aPatjens, Svenja$$b4
000614020 7001_ $$0P:(DE-H253)PIP1089816$$aBarp, Jackson$$b5
000614020 7001_ $$0P:(DE-H253)PIP1094287$$aFalkenberg, Gero$$b6
000614020 7001_ $$0P:(DE-H253)PIP1092095$$aHampel, Sven$$b7
000614020 7001_ $$0P:(DE-H253)PIP1081708$$aStückelberger, Michael$$b8
000614020 7001_ $$0P:(DE-H253)PIP1013228$$aGarrevoet, Jan$$b9
000614020 7001_ $$0P:(DE-H253)PIP1021825$$aBrueckner, Dennis Bjoern$$b10
000614020 7001_ $$0P:(DE-H253)PIP1088525$$aModregger, Peter$$b11$$eCorresponding author
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