%0 Electronic Article
%A Khaliq, Ahmar
%A Wittwer, Felix
%A Pyrlik, Niklas
%A Fevola, Giovanni
%A Patjens, Svenja
%A Barp, Jackson
%A Falkenberg, Gero
%A Hampel, Sven
%A Stückelberger, Michael
%A Garrevoet, Jan
%A Brueckner, Dennis Bjoern
%A Modregger, Peter
%T Measurements of dislocations in 4H-SiC with rocking curve imaging
%N arXiv:2409.00200
%M PUBDB-2024-05721
%M arXiv:2409.00200
%D 2024
%X 4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. The derived maps from the fitted Gaussian parameters were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.
%F PUB:(DE-HGF)25
%9 Preprint
%U https://bib-pubdb1.desy.de/record/614020