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@ARTICLE{Dacha:611504,
      author       = {Dacha, Preetam and Haase, Katherina and
                      Wrzesińska-Lashkova, Angelika and Pohl, Darius and Maletz,
                      Roman and Millek, Vojtech and Tahn, Alexander and
                      Rellinghaus, Bernd and Dornack, Christina and Vaynzof, Yana
                      and Hambsch, Mike and Mannsfeld, Stefan},
      title        = {{E}co‐{F}riendly {A}pproach to {U}ltra‐{T}hin {M}etal
                      {O}xides‐ {S}olution {S}heared {A}luminum {O}xide for
                      {H}alf‐{V}olt {O}peration of {O}rganic {F}ield‐{E}ffect
                      {T}ransistors},
      journal      = {Advanced functional materials},
      volume       = {34},
      number       = {41},
      issn         = {1616-301X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {PUBDB-2024-04941},
      pages        = {2315850},
      year         = {2024},
      abstract     = {Sol–gel-based solution-processed metal oxides have
                      emerged as a key fabrication method for applications in thin
                      film transistors both as a semiconducting and a dielectric
                      layer. Here, a low-temperature, green solvent-based,
                      non-toxic, and cost-effective solution shearing approach for
                      the fabrication of thin aluminum oxide (AlOx) dielectrics is
                      reported. Optimization of sustainability aspects like energy
                      demand, and selection of chemicals used allows to reduce the
                      environmental impact of the life cycle of the resulting
                      product already in the design phase. Using this approach,
                      ultra-thin, device-grade AlOx films of 7 nm are coated—the
                      thinnest films to be reported for any solution-fabrication
                      method. The metal oxide formation is achieved by both
                      thermal annealing and deep ultra-violet (UV) light exposure
                      techniques, resulting in capacitances of 750 and 600 nF
                      cm−2, respectively. The structural analysis using
                      microscopy and x-ray spectroscopy techniques confirmed the
                      formation of smooth, ultra-thin AlOx films. These thin films
                      are employed in organic field-effect transistors (OFETs)
                      resulting in stable, low hysteresis devices leading to high
                      mobilities (6.1 ± 0.9 cm2 V−1 s−1), near zero threshold
                      voltage (−0.14 ± 0.07 V) and a low subthreshold swing (96
                      ± 16 mV dec−1), enabling device operation at only ±0.5 V
                      with a good Ion/Ioff ratio (3.7 × 105).},
      cin          = {DOOR ; HAS-User},
      ddc          = {530},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {6G3 - PETRA III (DESY) (POF4-6G3) / FS-Proposal: I-20230095
                      (I-20230095) / ENERGYMAPS - Revealing the electronic energy
                      landscape of multi-layered (opto)electronic devices
                      (714067)},
      pid          = {G:(DE-HGF)POF4-6G3 / G:(DE-H253)I-20230095 /
                      G:(EU-Grant)714067},
      experiment   = {EXP:(DE-H253)P-P08-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001260594300001},
      doi          = {10.1002/adfm.202315850},
      url          = {https://bib-pubdb1.desy.de/record/611504},
}