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@ARTICLE{Brinker:605489,
      author       = {Brinker, Manuel and Huber, Patrick},
      title        = {{A} {M}ott-{S}chottky analysis of mesoporous silicon in
                      aqueous electrolyte solution by electrochemical impedance
                      spectroscopy},
      journal      = {Electrochimica acta},
      volume       = {483},
      issn         = {0013-4686},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PUBDB-2024-01466, arXiv:2312.04252},
      pages        = {144038},
      year         = {2024},
      note         = {5 pages, 3 figures},
      abstract     = {Nanoporosity in silicon leads to completely new
                      functionalities of this mainstream semiconductor.In recent
                      years, it has been shown that filling the pores with aqueous
                      electrolytes in addition opensa particularly wide field for
                      modifying and achieving active control of these
                      functionalities, e.g.,for electrochemo-mechanical actuation
                      and tunable photonics, or for the design of on-chip
                      superca-pacitors. However, a mechanistic understanding of
                      these new features has been hampered by thelack of a
                      detailed characterization of the electrochemical behavior of
                      mesoporous silicon in aqueouselectrolytes. Here, the
                      capacitive, potential-controlled charging of the electrical
                      double layer in amesoporous silicon electrode (pore diameter
                      7 nm) imbibed with perchloric acid solution is studiedby
                      electrochemical impedance spectroscopy. Thorough
                      measurements with detailed explanationsof the observed
                      phenomena lead to a comprehensive understanding of the
                      capacitive properties ofporous silicon. An analysis based on
                      the Mott-Schottky equation allows general conclusions to
                      bedrawn about the state of the band structure within the
                      pore walls. Essential parameters such as theflat band
                      potential, the doping density and the width of the space
                      charge region can be determined.A comparison with bulk
                      silicon shows that the flat band potential in particular is
                      significantly al-tered by the introduction of nanopores, as
                      it shifts from 1.4 ± 0.1 V to 1.9 ± 0.2 V. Overall,
                      thisstudy provides a unique insight into the electrochemical
                      processes, especially the electrical doublelayer charging,
                      of nanoporous semiconductor electrodes.},
      cin          = {CIMMS},
      ddc          = {540},
      cid          = {I:(DE-H253)CIMMS-20211022},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / EHAWEDRY - Energy harvesting via
                      wetting/drying cycles with nanoporous electrodes (964524)},
      pid          = {G:(DE-HGF)POF4-632 / G:(EU-Grant)964524},
      experiment   = {EXP:(DE-MLZ)NOSPEC-20140101},
      typ          = {PUB:(DE-HGF)16},
      eprint       = {2312.04252},
      howpublished = {arXiv:2312.04252},
      archivePrefix = {arXiv},
      SLACcitation = {$\%\%CITATION$ = $arXiv:2312.04252;\%\%$},
      UT           = {WOS:001203564000001},
      doi          = {10.1016/j.electacta.2024.144038},
      url          = {https://bib-pubdb1.desy.de/record/605489},
}