TY  - EJOUR
AU  - Volker, Alexander
AU  - Schmidt, Janis Viktor
AU  - Dannheim, Dominik
AU  - Svihra, Peter
AU  - Pinto, Mateus Vicente Barreto
AU  - de Oliveira, Rui
AU  - Braach, Justus
AU  - Yang, Xiao
AU  - Ruat, Marie
AU  - Magalhaes, Débora
AU  - Centis Vignali, Matteo
AU  - Calderini, Giovanni
AU  - Kristiansen, Helge
TI  - Pixel detector hybridization and integration with anisotropic conductive adhesives
IS  - arXiv:2312.09883
M1  - PUBDB-2024-00405
M1  - arXiv:2312.09883
PY  - 2023
N1  - Procceding to IPRD23 conference in Siena 2023
AB  - A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. For small-scale applications and during the ASIC and sensor development phase, interconnect technologies must also be suitable for the assembly of single-dies typically available from Multi-Project-Wafer submissions. Within the CERN EP R</td><td width="150">
AB  - D program and the AIDAinnova collaboration, innovative and scalable hybridization concepts are under development for pixel-detector applications in future colliders. This contribution presents recent results of a newly developed in-house single-die interconnection process based on Anisotropic Conductive Adhesives (ACA). The ACA interconnect technology replaces solder bumps with conductive micro-particles embedded in an epoxy layer applied as either film or paste. The electro-mechanical connection between the sensor and ASIC is achieved via thermocompression of the ACA using a flip-chip device bonder. A specific pixel-pad topology is required to enable the connection via micro-particles and create cavities into which excess epoxy can flow. This pixel-pad topology is achieved with an in-house Electroless Nickel Immersion Gold process that is also under development within the project. The ENIG and ACA processes are qualified with a variety of different ASICs, sensors, and dedicated test structures, with pad diameters ranging from 12 μm to 140 μm and pitches between 20 μm and 1.3 mm. The produced assemblies are characterized electrically, with radioactive-source exposures, and in tests with high-momentum particle beams. A focus is placed on recent optimization of the plating and interconnect processes, resulting in an improved plating uniformity and interconnect yield.
LB  - PUB:(DE-HGF)25
DO  - DOI:10.3204/PUBDB-2024-00405
UR  - https://bib-pubdb1.desy.de/record/601893
ER  -