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000599311 1001_ $$0P:(DE-H253)PIP1086059$$aZahari, Finn$$b0$$eCorresponding author
000599311 245__ $$aTrap‐Assisted Memristive Switching in HfO$_2$ ‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy
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000599311 520__ $$aMemristive devices are under intense development as non-volatile memory elements for extending the computing capabilities of traditional silicon technology by enabling novel computing primitives. In this respect, interface-based memristive devices are promising candidates to emulate synaptic functionalities in neuromorphic circuits aiming to replicate the information processing of nervous systems. A device composed of Nb/NbO$_x$/Al$_2$O$_3$/HfO$_2$/Au that shows promising features like analog switching, no electro-forming, and high current-voltage non-linearity is reported. Synchrotron-based X-ray photoelectron spectroscopy and depth-dependent hard X-ray photoelectron spectroscopy are used to probe in situ different resistance states and thus the origin of memristive switching. Spectroscopic evidence for memristive switching based on the charge state of electron traps within HfO$_2$ is found. Electron energy loss spectroscopy and transmission electron microscopy support the analysis. A device model is proposed that considers a two-terminal metal–insulator–semiconductor structure in which traps within the insulator (HfO$_2$/Al$_2$O$_3$) modulate the space charge region within the semiconductor (NbO$_x$) and, thereby, the overall resistance. The experimental findings are in line with impedance spectroscopy data reported in the companion paper (Marquardt et al). Both works complement one another to derive a detailed device model, which helps to engineer device performance and integrate devices into silicon technology.
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000599311 7001_ $$0P:(DE-H253)PIP1086056$$aMarquardt, Richard$$b1
000599311 7001_ $$0P:(DE-H253)PIP1008828$$aKalläne, Matthias$$b2
000599311 7001_ $$aGronenberg, Ole$$b3
000599311 7001_ $$0P:(DE-H253)PIP1011024$$aSchlueter, Christoph$$b4
000599311 7001_ $$0P:(DE-H253)PIP1013396$$aMatveyev, Yury$$b5
000599311 7001_ $$00000-0003-4136-9384$$aHaberfehlner, Georg$$b6
000599311 7001_ $$0P:(DE-H253)PIP1019378$$aDiekmann, Florian$$b7
000599311 7001_ $$0P:(DE-H253)PIP1080354$$aNierhauve, Alena$$b8
000599311 7001_ $$0P:(DE-H253)PIP1009466$$aBuck, Jens$$b9
000599311 7001_ $$0P:(DE-H253)PIP1013674$$aHanff, Arndt$$b10
000599311 7001_ $$0P:(DE-H253)PIP1091399$$aKolhatkar, Gitanjali$$b11
000599311 7001_ $$00000-0002-2116-7761$$aKothleitner, Gerald$$b12
000599311 7001_ $$0P:(DE-H253)PIP1015170$$aKienle, Lorenz$$b13
000599311 7001_ $$aZiegler, Martin$$b14
000599311 7001_ $$aCarstensen, Jürgen$$b15
000599311 7001_ $$0P:(DE-H253)PIP1007948$$aRossnagel, Kai$$b16
000599311 7001_ $$0P:(DE-H253)PIP1087948$$aKohlstedt, Hermann$$b17
000599311 773__ $$0PERI:(DE-600)2810904-1$$a10.1002/aelm.202201226$$gVol. 9, no. 6, p. 2201226$$n6$$p2201226$$tAdvanced electronic materials$$v9$$x2199-160X$$y2023
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