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@INPROCEEDINGS{Diehl:598369,
      author       = {Diehl, Inge and Eckstein, Doris and Feindt, Finn and
                      Gregor, Ingrid-Maria and Hansen, Karsten and Lachnit,
                      Stephan and Poblotzki, Frauke and Rastorguev, Daniil and
                      Spannagel, Simon and Vanat, Tomas and Vignola, Gianpiero},
      title        = {{T}est {B}eam {C}haracterization of a digital {S}i{PM} in
                      150 nm {CMOS} {I}maging {T}echnology},
      school       = {DESY},
      reportid     = {PUBDB-2023-06797},
      year         = {2023},
      abstract     = {Silicon photomultipliers (SiPMs) are solid-state light
                      detectors capable of detecting single photons with high
                      quantum efficiency in the ultraviolet to visible energy
                      range with excellent time resolution. Due to their unique
                      characteristics, these devices are increasingly used in
                      high-energy physics, medical and commercial applications.
                      Most SiPMs are implemented as large arrays of single-photon
                      avalanche diodes (SPADs) in a parallel circuit, serving as
                      analog photon counters.Recently, SPADs have been integrated
                      into standard high-volume CMOS processes. This not only
                      allows the production of large volumes of SiPMs at a
                      relatively low cost, but also offers the possibility of
                      combining SPAD peculiarities with the flexibility and
                      possibilities offered by CMOS imaging technology. The
                      implementation of CMOS circuitry extends the properties of
                      standard SiPMs with features such as in-pixel digitization,
                      full Hitmap readout, masking of noisy SPADs, implementation
                      of trigger logic, on-chip Time to Digital Converter. These
                      features allow exploring new fields of applications for SPAD
                      arrays such as Minimum Ionizing Particle detection with
                      excellent spatial and temporal resolutions (4D-Tracking)A
                      prototype digital SiPM (dSiPM) with per-pixel CMOS circuits
                      was developed at DESY in a 150-nm CMOS technology offered by
                      LFoundry. The chip consists of a 32 x 32-pixel main dSiPM
                      and test structures. Several characterizations were
                      performed in the laboratory on the prototypes and three Test
                      Beam campaigns were carried out at DESY-II Testbeam facility
                      investigating the 4D-Traking performance of the dSiPM.In
                      this contribution, the results of the characterizations
                      performed on the Chip will be reported. In particular, the
                      Test Beam setups and techniques used for data taking and
                      Corryvreckan analysis will be presented, along with an
                      overview of planned future studies.},
      month         = {Apr},
      date          = {2023-04-17},
      organization  = {11th Beam Telescopes and Test Beams
                       Workshop, Hamburg (Germany), 17 Apr
                       2023 - 21 Apr 2023},
      cin          = {ATLAS},
      cid          = {I:(DE-H253)ATLAS-20120731},
      pnm          = {611 - Fundamental Particles and Forces (POF4-611)},
      pid          = {G:(DE-HGF)POF4-611},
      experiment   = {EXP:(DE-H253)LHC-Exp-ATLAS-20150101 /
                      EXP:(DE-H253)LHC(machine)-20150101},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://bib-pubdb1.desy.de/record/598369},
}