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@INPROCEEDINGS{Diehl:598368,
      author       = {Diehl, Inge and Eckstein, Doris and Feindt, Finn and
                      Gregor, Ingrid-Maria and Hansen, Karsten and Lachnit,
                      Stephan and Poblotzki, Frauke and Rastorguev, Daniil and
                      Spannagel, Simon and Vanat, Tomas and Vignola, Gianpiero},
      title        = {{C}haracterization of a digital {S}i{PM} in150 nm {CMOS}
                      {I}maging {T}echnology - {F}irst {C}haracterization $\&$
                      {R}esults},
      reportid     = {PUBDB-2023-06796},
      year         = {2023},
      abstract     = {Silicon Photomultipliers (SiPMs) are well known as
                      excellent light detectors in the ultraviolet to visible
                      energy range with sub-nanosecond time resolution. Due to
                      their unique characteristics, these detectors are widely
                      used in high-energy physics and medical imaging systems. In
                      conventional SiPMs, an array of Single Photon Avalanche
                      Diodes (SPADs) is connected in parallel. In these devices
                      the time resolution is intrinsically limited by the total
                      output capacitance and the spatial resolution on the order
                      of the physical size of the array.In recent years, SPADs
                      have been integrated into standard high-volume CMOS
                      processes. This not only allows the production of large
                      volumes of SiPMs at a relatively low cost but also offers
                      the possibility of combining the excellent light detection
                      efficiency and time resolution of SPADs with the flexibility
                      and possibilities offered by CMOS imaging technology.A
                      prototype of a digital SiPM was designed at DESY in 150 nm
                      LFoundry CMOS technology using 25 x 25 SPADs. The main array
                      consists of 32 x 32 pixels, containing 4 SPADs, quenching
                      and readout circuitry. The readout is frame-based, operating
                      with a 3 MHz clock. The data from the chip contains the hit
                      map with the coordinates of the firing pixels and timestamps
                      given by four shared 12-bit TDCs. The dSiPM has been
                      characterized using the versatile Caribou DAQ system.
                      Detailed Current/Voltage (IV) and Dark Count Rate (DCR)
                      studies were performed in a temperature-controlled
                      environment, Minimum Ionizing Particle (MIP) detection
                      efficiency and spatial resolution measurements were carried
                      out at the DESY-II Test Beam Facility using an electron
                      beam, and a characterisation of the temporal performance was
                      conducted using a laser setup.In this contribution, the main
                      features of the dSiPM are reported along with the results of
                      the performed characterizations. Plans for future studies
                      and developments are also presented.},
      month         = {Feb},
      date          = {2023-02-28},
      organization  = {18th Trento Workshop on Advanced
                       Silicon Radiation Detectors, Trento
                       (Italy), 28 Feb 2023 - 2 Mar 2023},
      cin          = {ATLAS},
      cid          = {I:(DE-H253)ATLAS-20120731},
      pnm          = {611 - Fundamental Particles and Forces (POF4-611)},
      pid          = {G:(DE-HGF)POF4-611},
      experiment   = {EXP:(DE-H253)LHC-Exp-ATLAS-20150101 /
                      EXP:(DE-H253)LHC(machine)-20150101},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://bib-pubdb1.desy.de/record/598368},
}