%0 Journal Article
%A Diehl, Inge
%A Hansen, K.
%A Vanat, T.
%A Vignola, G.
%A Feindt, F.
%A Rastorguev, D.
%A Spannagel, S.
%T Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70 μm pixel pitch
%J Journal of Instrumentation
%V 19
%N 01
%@ 1748-0221
%C London
%I Inst. of Physics
%M PUBDB-2023-06729
%M arXiv:2311.13220
%P P01020
%D 2024
%Z 16 pages, 13 figures, 1 table
%X This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32 × 32 pixel matrix at 70 μm pitch. The IC provides per-quadrant time stamping and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sharing a quenching and subsequent processing circuitry and has a fill factor of 30 %. A sub-100 ps precision, 12-bit time-to-digital converter (TDC) provides timestamps per quadrant with an acquisition rate of 3 MHz. Together with the hit map, the total sustained data throughput of the IC amounts to 4 Gbps. Measurements obtained in a dark, temperature-stable environment as well as by using a pulsed laser environment show the full dSiPM-IC functionality. The dark-count rate (DCR) as function of the overvoltage and temperature, the TDC resolution, differential and integral nonlinearity (DNL/INL) as well as the propagation-delay variations across the matrix are presented. With aid of additional peripheral test structures, the main building blocks are characterized and key parameters are presented.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001167320400004
%R 10.1088/1748-0221/19/01/P01020
%U https://bib-pubdb1.desy.de/record/598042