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000484450 1001_ $$0P:(DE-H253)PIP1089793$$aMorgenbesser, Maximilian$$b0
000484450 245__ $$aUnravelling the Origin of Ultra‐Low Conductivity in SrTiO$_3$ Thin Films: Sr Vacancies and Ti on A‐Sites Cause Fermi Level Pinning
000484450 260__ $$aWeinheim$$bWiley-VCH$$c2022
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000484450 520__ $$aDifferent SrTiO$_3$ thin films are investigated to unravel the nature of ultra-low conductivities recently found in SrTiO$_3$ films prepared by pulsed laser deposition. Impedance spectroscopy reveals electronically pseudo-intrinsic conductivities for a broad range of different dopants (Fe, Al, Ni) and partly high dopant concentrations up to several percent. Using inductively-coupled plasma optical emission spectroscopy and reciprocal space mapping, a severe Sr deficiency is found and positron annihilation lifetime spectroscopy revealed Sr vacancies as predominant point defects. From synchrotron-based X-ray standing wave and X-ray absorption spectroscopy measurements, a change in site occupation is deduced for Fe-doped SrTiO$_3$ films, accompanied by a change in the dopant type. Based on these experiments, a model is deduced, which explains the almost ubiquitous pseudo-intrinsic conductivity of these films. Sr deficiency is suggested as key driver by introducing Sr vacancies and causing site changes (Fe$_{Sr}$ and Ti$_{Sr}$) to accommodate nonstoichiometry. Sr vacancies act as mid-gap acceptor states, pinning the Fermi level, provided that additional donor states (most probably Ti$_{Sr}^{\bullet\bullet}$) are present. Defect chemical modeling revealed that such a Fermi level pinning also causes a self-limitation of the Ti site change and leads to a very robust pseudo-intrinsic situation, irrespective of Sr/Ti ratios and doping.
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000484450 7001_ $$0P:(DE-H253)PIP1089775$$aViernstein, Alexander$$b1
000484450 7001_ $$0P:(DE-HGF)0$$aSchmid, Alexander$$b2$$eCorresponding author
000484450 7001_ $$aHerzig, Christopher$$b3
000484450 7001_ $$0P:(DE-H253)PIP1090459$$aKubicek, Markus$$b4
000484450 7001_ $$aTaibl, Stefanie$$b5
000484450 7001_ $$aBimashofer, Gesara$$b6
000484450 7001_ $$aStahn, Jochen$$b7
000484450 7001_ $$aVaz, Carlos Antonio Fernandes$$b8
000484450 7001_ $$aDöbeli, Max$$b9
000484450 7001_ $$aBiautti, Federico$$b10
000484450 7001_ $$ade Dios Sirvent, Juan$$b11
000484450 7001_ $$aLiedke, Maciej Oskar$$b12
000484450 7001_ $$aButterling, Maik$$b13
000484450 7001_ $$0P:(DE-H253)PIP1081135$$aKamiński, Michał$$b14
000484450 7001_ $$0P:(DE-H253)PIP1007498$$aTolkiehn, Martin$$b15
000484450 7001_ $$0P:(DE-H253)PIP1013931$$aVonk, Vedran$$b16
000484450 7001_ $$0P:(DE-H253)PIP1012873$$aStierle, Andreas$$b17
000484450 7001_ $$0P:(DE-H253)PIP1032567$$aWagner, Andreas$$b18
000484450 7001_ $$aTarancon, Albert$$b19
000484450 7001_ $$aLimbeck, Andreas$$b20
000484450 7001_ $$0P:(DE-H253)PIP1024063$$aFleig, Jürgen$$b21
000484450 773__ $$0PERI:(DE-600)2039420-2$$a10.1002/adfm.202202226$$gVol. 32, no. 38, p. 2202226 -$$n38$$p2202226$$tAdvanced functional materials$$v32$$x1057-9257$$y2022
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