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@ARTICLE{Chouprik:481023,
      author       = {Chouprik, Anastasia and Kirtaev, Roman and Korostylev,
                      Evgeny and Mikheev, Vitalii and Spiridonov, Maxim and
                      Negrov, Dmitrii},
      title        = {{N}anoscale {D}oping and {I}ts {I}mpact on the
                      {F}erroelectric and {P}iezoelectric {P}roperties of
                      {H}f$_{0.5}${Z}r$_{0.5}${O}$_2$},
      journal      = {Nanomaterials},
      volume       = {12},
      number       = {9},
      issn         = {2079-4991},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {PUBDB-2022-04145},
      pages        = {1483},
      year         = {2022},
      abstract     = {Ferroelectric hafnium oxide thin films—the most promising
                      materials in microelectronics’ non-volatile
                      memory—exhibit both unconventional ferroelectricity and
                      unconventional piezoelectricity. Their exact origin remains
                      controversial, and the relationship between ferroelectric
                      and piezoelectric properties remains unclear. We introduce a
                      new method to investigate this issue, which consists in a
                      local controlled modification of the ferroelectric and
                      piezoelectric properties within a single
                      Hf$_{0.5}$Zr$_{0.5}$O$_2$ capacitor device through local
                      doping and a further comparative nanoscopic analysis of the
                      modified regions. By comparing the ferroelectric properties
                      of Ga-doped Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films with the
                      results of piezoresponse force microscopy and their
                      simulation, as well as with the results of in situ
                      synchrotron X-ray microdiffractometry, we demonstrate that,
                      depending on the doping concentration, ferroelectric
                      Hf$_{0.5}$Zr$_{0.5}$O$_2$ has either a negative or a
                      positive longitudinal piezoelectric coefficient, and its
                      maximal value is −0.3 pm/V. This is several hundreds or
                      thousands of times less than those of classical
                      ferroelectrics. These changes in piezoelectric properties
                      are accompanied by either improved or decreased remnant
                      polarization, as well as partial or complete domain
                      switching. We conclude that various ferroelectric and
                      piezoelectric properties, and the relationships between
                      them, can be designed for Hf$_{0.5}$Zr$_{0.5}$O$_2$ via
                      oxygen vacancies and mechanical-strain engineering, e.g., by
                      doping ferroelectric films.},
      cin          = {DOOR ; HAS-User},
      ddc          = {540},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {6G3 - PETRA III (DESY) (POF4-6G3) / FS-Proposal: I-20190533
                      (I-20190533)},
      pid          = {G:(DE-HGF)POF4-6G3 / G:(DE-H253)I-20190533},
      experiment   = {EXP:(DE-H253)P-P23-20150101},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:35564195},
      UT           = {WOS:000795416600001},
      doi          = {10.3390/nano12091483},
      url          = {https://bib-pubdb1.desy.de/record/481023},
}