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@ARTICLE{Krger:477633,
      author       = {Kröger, E. and Petraru, A. and Hanff, A. and Soni, R. and
                      Kalläne, M. and Denlinger, J. D. and Learmonth, T. and Guo,
                      J.-H. and Smith, K. E. and Schneller, T. and Freelon, B. and
                      Kipp, L. and Kohlstedt, H. and Rossnagel, K. and Kolhatkar,
                      G.},
      title        = {{D}igging deeper: {B}uried layers and interfaces studied by
                      modified total electron yield and soft x-ray absorption
                      spectroscopy},
      journal      = {Applied physics letters},
      volume       = {120},
      number       = {18},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {PUBDB-2022-01974},
      pages        = {181601},
      year         = {2022},
      abstract     = {We report on the soft x-ray absorption spectroscopy
                      investigation of thin film capacitors using a modified total
                      electron yield detection mode. This mode utilizes two
                      ammeters instead of one as commonly employed in the
                      classical total electron yield scheme to measure
                      photocurrents of devices under soft x-ray irradiation. The
                      advantage of this configuration over the surface sensitive
                      classical total electron yield mode is that it can provide
                      information from buried layers and interfaces up to a
                      thickness equal to the penetration depth of soft x-rays. The
                      method can be easily adapted to existing synchrotron end
                      stations. We investigate dielectric capacitors with
                      dissimilar electrodes to assess the feasibility of the
                      modified total electron yield method. Furthermore, in
                      operando soft x-ray absorption spectroscopy measurements are
                      performed on ferroelectric capacitors under bias and using
                      two ammeters. The experimental results are discussed in
                      terms of the external and internal photoemission processes
                      and their distribution in thin film capacitors under an
                      external bias condition. The proposed detection method opens
                      the way to perform electronic and chemical state analyses of
                      the buried interfaces and layers in various devices like
                      multiferroic tunnel junctions, memristive devices, etc.,
                      during operation under an applied bias.},
      cin          = {DOOR ; HAS-User / FS-SXQM},
      ddc          = {530},
      cid          = {I:(DE-H253)HAS-User-20120731 / I:(DE-H253)FS-SXQM-20190201},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632)},
      pid          = {G:(DE-HGF)POF4-632},
      experiment   = {EXP:(DE-H253)D-BW3-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001096068100002},
      doi          = {10.1063/5.0080289},
      url          = {https://bib-pubdb1.desy.de/record/477633},
}