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@ARTICLE{Krger:477633,
author = {Kröger, E. and Petraru, A. and Hanff, A. and Soni, R. and
Kalläne, M. and Denlinger, J. D. and Learmonth, T. and Guo,
J.-H. and Smith, K. E. and Schneller, T. and Freelon, B. and
Kipp, L. and Kohlstedt, H. and Rossnagel, K. and Kolhatkar,
G.},
title = {{D}igging deeper: {B}uried layers and interfaces studied by
modified total electron yield and soft x-ray absorption
spectroscopy},
journal = {Applied physics letters},
volume = {120},
number = {18},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {PUBDB-2022-01974},
pages = {181601},
year = {2022},
abstract = {We report on the soft x-ray absorption spectroscopy
investigation of thin film capacitors using a modified total
electron yield detection mode. This mode utilizes two
ammeters instead of one as commonly employed in the
classical total electron yield scheme to measure
photocurrents of devices under soft x-ray irradiation. The
advantage of this configuration over the surface sensitive
classical total electron yield mode is that it can provide
information from buried layers and interfaces up to a
thickness equal to the penetration depth of soft x-rays. The
method can be easily adapted to existing synchrotron end
stations. We investigate dielectric capacitors with
dissimilar electrodes to assess the feasibility of the
modified total electron yield method. Furthermore, in
operando soft x-ray absorption spectroscopy measurements are
performed on ferroelectric capacitors under bias and using
two ammeters. The experimental results are discussed in
terms of the external and internal photoemission processes
and their distribution in thin film capacitors under an
external bias condition. The proposed detection method opens
the way to perform electronic and chemical state analyses of
the buried interfaces and layers in various devices like
multiferroic tunnel junctions, memristive devices, etc.,
during operation under an applied bias.},
cin = {DOOR ; HAS-User / FS-SXQM},
ddc = {530},
cid = {I:(DE-H253)HAS-User-20120731 / I:(DE-H253)FS-SXQM-20190201},
pnm = {632 - Materials – Quantum, Complex and Functional
Materials (POF4-632)},
pid = {G:(DE-HGF)POF4-632},
experiment = {EXP:(DE-H253)D-BW3-20150101},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001096068100002},
doi = {10.1063/5.0080289},
url = {https://bib-pubdb1.desy.de/record/477633},
}