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@ARTICLE{Loisch:474839,
      author       = {Loisch, Gregor and Chen, Ye Lining and Koschitzki,
                      Christian and Qian, Houjun and Gross, Matthias and Hannah,
                      Adrian and Hoffmann, Andreas and Kalantaryan, Davit and
                      Krasilnikov, Mikhail and Lederer, Sven and Li, Xiangkun and
                      Lishilin, Osip and Melkumyan, David and Monaco, Laura and
                      Niemczyk, Raffael and Oppelt, Anne and Sertore, Daniele and
                      Stephan, Frank and Valizadeh, Reza and Vashchenko, Grygorii
                      and Weilbach, Tobias},
      title        = {{D}irect {M}easurement of {P}hotocathode {T}ime {R}esponse
                      in a {H}igh-{B}rightness {P}hotoinjector},
      journal      = {Applied physics letters},
      volume       = {120},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {PUBDB-2022-01032},
      pages        = {104102},
      year         = {2022},
      abstract     = {Electron photoinjectors provide high-brightness electron
                      beams to numerous research applications in physics,
                      chemistry, material, and life sciences. Semiconductor
                      photocathodes are widely used here, as they enable the
                      production of low-emittance beams with variable charge at
                      high repetition rates. One of the key figures of merit of
                      photocathodes is the minimum achievable bunch length. In
                      semiconductor cathodes, this is dominated by scattering
                      effects and varying penetration depths of the extracting
                      photons, which leads to a characteristic electron emission
                      function. We present a method to determine this cathode time
                      response with resolution on the tens of femtoseconds level,
                      breaking the resolution barrier encountered in previous
                      studies. The method is demonstrated with cesium-telluride
                      (Cs$_2$Te) and gold cathodes, revealing response times of
                      (184 ± 41) fs up to (253 ± 58) fs for the
                      semiconductor and an upper limit of (93 ± 17) fs for
                      the metal. Monte Carlo simulations of Cs$_2$Te emission
                      benchmarked to these results give detailed information about
                      the cathode material.},
      cin          = {$Z_PITZ$ / MIN / MVS / MXL},
      ddc          = {530},
      cid          = {$I:(DE-H253)Z_PITZ-20210408$ / I:(DE-H253)MIN-20120731 /
                      I:(DE-H253)MVS-20120731 / I:(DE-H253)MXL-20160301},
      pnm          = {621 - Accelerator Research and Development (POF4-621)},
      pid          = {G:(DE-HGF)POF4-621},
      experiment   = {EXP:(DE-H253)PITZ-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000767648900007},
      doi          = {10.1063/5.0078927},
      url          = {https://bib-pubdb1.desy.de/record/474839},
}