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@ARTICLE{Stronski:474080,
author = {Stronski, A. V. and Kavetskyy, T. S. and Revutska, L. O.
and Kaban, I. and Jóvári, P. and Shportko, K. V. and
Sergienko, V. P. and Popovych, M. V.},
title = {{T}he boson peak and the first sharp diffraction peak in
({A}s$_2${S}$_3$)$_x$({G}e{S}$_2$)$_{1–x}$ glasses},
journal = {Semiconductor physics, quantum electronics $\&$
optoelectronics},
volume = {24},
number = {3},
issn = {1560-8034},
address = {Kyiv},
publisher = {Inst. of Semiconductor Physics},
reportid = {PUBDB-2022-00498},
pages = {312 - 318},
year = {2021},
abstract = {The parameters of the boson peak (BP) and the first sharp
diffraction peak (FSDP) in
(As$_2$S$_3$)$_x$(GeS$_2$)$_{1–x}$ glasses measured using
high-resolution Raman spectroscopy and high-energy
synchrotron X-ray diffraction measurements are examined as a
function of x. It has been found that there is no
correlation between the positions of BP and FSDP. The BP
position shows a nonlinear composition behavior with a
maximum at about x = 0.4, whereas the FSDP position changes
virtually linearly with x. The intensities of both BP and
FSDP show nonlinear composition dependences with the slope
changes at x = 0.4, although there is no direct
proportionality. Analysis of the partial structure factors
for the glasses with x = 0.2, 0.4 and 0.6 obtained in
another study has shown that the cation-cation atomic pairs
of Ge–Ge, Ge–As and As–As make the largest
contribution to FSDP, where the Ge–Ge and Ge–As pairs
are dominant.},
cin = {DOOR ; HAS-User},
ddc = {530},
cid = {I:(DE-H253)HAS-User-20120731},
pnm = {899 - ohne Topic (POF4-899)},
pid = {G:(DE-HGF)POF4-899},
experiment = {EXP:(DE-H253)D-BW5-20150101 / EXP:(DE-H253)D-X1-20150101},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000731131600010},
doi = {10.15407/spqeo24.03.312},
url = {https://bib-pubdb1.desy.de/record/474080},
}