TY  - JOUR
AU  - Stronski, A. V.
AU  - Kavetskyy, T. S.
AU  - Revutska, L. O.
AU  - Kaban, I.
AU  - Jóvári, P.
AU  - Shportko, K. V.
AU  - Sergienko, V. P.
AU  - Popovych, M. V.
TI  - The boson peak and the first sharp diffraction peak in (As<sub>2</sub>S<sub>3</sub>)<sub>x</sub>(GeS<sub>2</sub>)<sub>1–x</sub> glasses
JO  - Semiconductor physics, quantum electronics & optoelectronics
VL  - 24
IS  - 3
SN  - 1560-8034
CY  - Kyiv
PB  - Inst. of Semiconductor Physics
M1  - PUBDB-2022-00498
SP  - 312 - 318
PY  - 2021
AB  - The parameters of the boson peak (BP) and the first sharp diffraction peak (FSDP) in (As<sub>2</sub>S<sub>3</sub>)<sub>x</sub>(GeS<sub>2</sub>)<sub>1–x</sub> glasses measured using high-resolution Raman spectroscopy and high-energy synchrotron X-ray diffraction measurements are examined as a function of x. It has been found that there is no correlation between the positions of BP and FSDP. The BP position shows a nonlinear composition behavior with a maximum at about x = 0.4, whereas the FSDP position changes virtually linearly with x. The intensities of both BP and FSDP show nonlinear composition dependences with the slope changes at x = 0.4, although there is no direct proportionality. Analysis of the partial structure factors for the glasses with x = 0.2, 0.4 and 0.6 obtained in another study has shown that the cation-cation atomic pairs of Ge–Ge, Ge–As and As–As make the largest contribution to FSDP, where the Ge–Ge and Ge–As pairs are dominant.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000731131600010
DO  - DOI:10.15407/spqeo24.03.312
UR  - https://bib-pubdb1.desy.de/record/474080
ER  -