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@ARTICLE{Zorenko:441952,
      author       = {Zorenko, T. and Gorbenko, V. and Vozniak, T. and Heinrich,
                      S. and Huber, G. and Zorenko, Yu.},
      title        = {{C}omparison of the luminescent properties of {L}u{AG}:{C}e
                      films grown by pulse laser deposition and liquid phase
                      epitaxy methods using synchrotron radiation excitation},
      journal      = {Optical materials},
      volume       = {105},
      issn         = {0925-3467},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PUBDB-2020-02820},
      pages        = {109751},
      year         = {2020},
      note         = {Waiting for fulltext},
      abstract     = {The paper is dedicated to the comparative study of the
                      luminescent properties of LuAG:Ce films, grown by pulse
                      laser deposition (PLD) and liquid phase epitaxy (LPE)
                      methods, using the time-resolved luminescent spectroscopy
                      under excitation by synchrotron radiation in the fundamental
                      absorption range and above the band gap of LuAG host. We
                      have shown the similarities and differences in the
                      luminescence properties of LuAG:Ce PLD and LPE grown films.
                      Specifically, the luminescence of Lu$_{Al}$ antisite defects
                      is absent in the emission spectra of both films in the room
                      temperature range. Meanwhile, the low intensive bands peaked
                      at 350 and 400 nm, corresponding to the luminescence of
                      excitons localized around and bound with F$^{+}$ centers,
                      respectively, are present in the emission spectra of LuAG:Ce
                      PLD films at 12 K. The energy of formation of the excitons
                      bound with the Ce$^{3+}$ ions, being equal to 7.52 eV at 12
                      K, and the energy of the onset of interband transitions of
                      LuAG host, being equal to 7.76 eV (at 300 K), have been
                      found for LuAG:Ce LPE and PLD films, respectively. We have
                      also found that the scintillation properties of LuAG:Ce PDL
                      film are worse in comparison with LPE grown film analogue
                      due to the significantly larger content of the slow emission
                      component in the scintillation decay under high-energy
                      excitation. Such differences between the optical and
                      scintillation properties of PLD and LPE films are caused by
                      the diffe rent conditions of their preparation (in vacuum
                      and in air).},
      cin          = {FS-DO},
      ddc          = {670},
      cid          = {I:(DE-H253)FS-DO-20120731},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      experiment   = {EXP:(DE-H253)D-I-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000539377300001},
      doi          = {10.1016/j.optmat.2020.109751},
      url          = {https://bib-pubdb1.desy.de/record/441952},
}