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@ARTICLE{Sedgwick:436494,
      author       = {Sedgwick, I. and Krivan, F. and Shevyakov, I. and Zimmer,
                      M. and Graafsma, H. and Cautero, G. and Giuressi, D. and
                      Menk, R. and Pinaroli, G. and Stebel, L. and Greer, A. and
                      Guerrini, N. and Pedersen, U. and Tartoni, N. and Rah, SY
                      and Hyun, HJ and Kim, KS and Kim, SH and Boitrelle, B. and
                      Orsini, F. and Marsh, B. and Nicholls, T. and Marras, A. and
                      Wunderer, Cornelia and Correa, J. and Kuhn, M. and Lange,
                      Sabine},
      title        = {{P}2{M}: {A} 2{MP}ixel {CMOS} {I}mage {S}ensor for {S}oft
                      {X}-{R}ay {D}etection},
      journal      = {... IEEE International Symposium on Circuits and Systems
                      proceedings},
      volume       = {51},
      issn         = {0271-4302},
      address      = {New York, N.Y.},
      publisher    = {Inst. of Electr. and Electronics Engineers},
      reportid     = {PUBDB-2020-00947},
      pages        = {50},
      year         = {2019},
      note         = {Published by IEEE},
      abstract     = {High brilliance synchrotrons and Free Electron Lasers
                      (FELs) require high performing detector systems to realise
                      their full potential. High dynamic range, low noise and high
                      frame rate are all of great importance. In this paper we
                      describe the P2M CMOS sensor, designed for soft X-ray
                      detection at such facilities. We refer to previous work on
                      test devices demonstrating a noise of <; 16e-, a full well
                      capacity of >5Me- and quantum efficiency of $>80\%$ at 400eV
                      (and with good sensitivity even below this value). Initial
                      test results on the first Front Side Illuminated (FSI) 2
                      Megapixel device are also presented, and an outline of
                      future work is described.},
      month         = {Nov},
      date          = {2019-11-27},
      organization  = {2019 26th IEEE International
                       Conference on Electronics, Circuits and
                       Systems (ICECS), Genoa (Italy), 27 Nov
                       2019 - 29 Nov 2019},
      cin          = {CFEL-DRD / FS-DS / FEA},
      ddc          = {620},
      cid          = {I:(DE-H253)CFEL-DRD-20160910 / I:(DE-H253)FS-DS-20120731 /
                      I:(DE-H253)FEA-20120731},
      pnm          = {632 - Detector technology and systems (POF3-632)},
      pid          = {G:(DE-HGF)POF3-632},
      experiment   = {EXP:(DE-H253)TestBeamline21-20150101},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1109/ICECS46596.2019.8964996},
      url          = {https://bib-pubdb1.desy.de/record/436494},
}