% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Mikheev:430253,
      author       = {Mikheev, Vitalii and Chouprik, Anastasia and Lebedinskii,
                      Yury and Zarubin, Sergei and Matveyev, Yury and Kondratyuk,
                      Ekaterina and Kozodaev, Maxim G. and Markeev, Andrey M. and
                      Zenkevich, Andrei and Negrov, Dmitrii},
      title        = {{F}erroelectric {S}econd-{O}rder {M}emristor},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {11},
      number       = {35},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {PUBDB-2019-05663},
      pages        = {32108 - 32114},
      year         = {2019},
      note         = {© American Chemical Society; Post referee fulltext in
                      progress; Embargo 12 months from publication},
      abstract     = {While the conductance of a first-order memristor is defined
                      entirely by the external stimuli, in the second-order
                      memristor it is governed by the both the external stimuli
                      and its instant internal state. As a result, the dynamics of
                      such devices allows to naturally emulate the temporal
                      behavior of biological synapses, which encodes the spike
                      timing information in synaptic weights. Here, we demonstrate
                      a new type of second-order memristor functionality in the
                      ferroelectric HfO2-based tunnel junction on silicon. The
                      continuous change of conductance in the
                      p+-Si/Hf0.5Zr0.5O2/TiN tunnel junction is achieved via the
                      gradual switching of polarization in ferroelectric domains
                      of polycrystalline Hf0.5Zr0.5O2 layer, whereas the combined
                      dynamics of the built-in electric field and charge
                      trapping/detrapping at the defect states at the bottom Si
                      interface defines the temporal behavior of the memristor
                      device, similar to synapses in biological systems. The
                      implemented ferroelectric second-order memristor exhibits
                      various synaptic functionalities, such as paired-pulse
                      potentiation/depression and spike-rate-dependent plasticity,
                      and can serve as a building block for the development of
                      neuromorphic computing architectures.},
      cin          = {DOOR ; HAS-User / FS-PET-S},
      ddc          = {600},
      cid          = {I:(DE-H253)HAS-User-20120731 /
                      I:(DE-H253)FS-PET-S-20190712},
      pnm          = {6G3 - PETRA III (POF3-622) / 6212 - Quantum Condensed
                      Matter: Magnetism, Superconductivity (POF3-621)},
      pid          = {G:(DE-HGF)POF3-6G3 / G:(DE-HGF)POF3-6212},
      experiment   = {EXP:(DE-H253)P-P22-20150101},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31402643},
      UT           = {WOS:000484831100057},
      doi          = {10.1021/acsami.9b08189},
      url          = {https://bib-pubdb1.desy.de/record/430253},
}