TY  - JOUR
AU  - Mikheev, Vitalii
AU  - Chouprik, Anastasia
AU  - Lebedinskii, Yury
AU  - Zarubin, Sergei
AU  - Matveyev, Yury
AU  - Kondratyuk, Ekaterina
AU  - Kozodaev, Maxim G.
AU  - Markeev, Andrey M.
AU  - Zenkevich, Andrei
AU  - Negrov, Dmitrii
TI  - Ferroelectric Second-Order Memristor
JO  - ACS applied materials & interfaces
VL  - 11
IS  - 35
SN  - 1944-8252
CY  - Washington, DC
PB  - Soc.
M1  - PUBDB-2019-05663
SP  - 32108 - 32114
PY  - 2019
N1  - © American Chemical Society; Post referee fulltext in progress; Embargo 12 months from publication
AB  - While the conductance of a first-order memristor is defined entirely by the external stimuli, in the second-order memristor it is governed by the both the external stimuli and its instant internal state. As a result, the dynamics of such devices allows to naturally emulate the temporal behavior of biological synapses, which encodes the spike timing information in synaptic weights. Here, we demonstrate a new type of second-order memristor functionality in the ferroelectric HfO2-based tunnel junction on silicon. The continuous change of conductance in the p+-Si/Hf0.5Zr0.5O2/TiN tunnel junction is achieved via the gradual switching of polarization in ferroelectric domains of polycrystalline Hf0.5Zr0.5O2 layer, whereas the combined dynamics of the built-in electric field and charge trapping/detrapping at the defect states at the bottom Si interface defines the temporal behavior of the memristor device, similar to synapses in biological systems. The implemented ferroelectric second-order memristor exhibits various synaptic functionalities, such as paired-pulse potentiation/depression and spike-rate-dependent plasticity, and can serve as a building block for the development of neuromorphic computing architectures.
LB  - PUB:(DE-HGF)16
C6  - pmid:31402643
UR  - <Go to ISI:>//WOS:000484831100057
DO  - DOI:10.1021/acsami.9b08189
UR  - https://bib-pubdb1.desy.de/record/430253
ER  -