%0 Journal Article
%A Mikheev, Vitalii
%A Chouprik, Anastasia
%A Lebedinskii, Yury
%A Zarubin, Sergei
%A Matveyev, Yury
%A Kondratyuk, Ekaterina
%A Kozodaev, Maxim G.
%A Markeev, Andrey M.
%A Zenkevich, Andrei
%A Negrov, Dmitrii
%T Ferroelectric Second-Order Memristor
%J ACS applied materials & interfaces
%V 11
%N 35
%@ 1944-8252
%C Washington, DC
%I Soc.
%M PUBDB-2019-05663
%P 32108 - 32114
%D 2019
%Z © American Chemical Society; Post referee fulltext in progress; Embargo 12 months from publication
%X While the conductance of a first-order memristor is defined entirely by the external stimuli, in the second-order memristor it is governed by the both the external stimuli and its instant internal state. As a result, the dynamics of such devices allows to naturally emulate the temporal behavior of biological synapses, which encodes the spike timing information in synaptic weights. Here, we demonstrate a new type of second-order memristor functionality in the ferroelectric HfO2-based tunnel junction on silicon. The continuous change of conductance in the p+-Si/Hf0.5Zr0.5O2/TiN tunnel junction is achieved via the gradual switching of polarization in ferroelectric domains of polycrystalline Hf0.5Zr0.5O2 layer, whereas the combined dynamics of the built-in electric field and charge trapping/detrapping at the defect states at the bottom Si interface defines the temporal behavior of the memristor device, similar to synapses in biological systems. The implemented ferroelectric second-order memristor exhibits various synaptic functionalities, such as paired-pulse potentiation/depression and spike-rate-dependent plasticity, and can serve as a building block for the development of neuromorphic computing architectures.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:31402643
%U <Go to ISI:>//WOS:000484831100057
%R 10.1021/acsami.9b08189
%U https://bib-pubdb1.desy.de/record/430253