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@PHDTHESIS{Poley:402646,
      author       = {Poley, Anne-Luise},
      othercontributors = {Bloch, Ingo and Moenig, Klaus},
      title        = {{S}tudies of adhesives and metal contacts on silicon strip
                      sensors for the {ATLAS} {I}nner {T}racker},
      school       = {Humboldt-Universität zu Berlin},
      type         = {Dissertation},
      address      = {Hamburg},
      publisher    = {Verlag Deutsches Elektronen-Synchrotron},
      reportid     = {PUBDB-2018-01870, DESY-THESIS-2018-011},
      series       = {DESY-THESIS},
      pages        = {260},
      year         = {2018},
      note         = {Dissertation, Humboldt-Universität zu Berlin, 2018},
      abstract     = {This thesis presents studies investigating the use of
                      adhesives on the active area of silicon strip sensors for
                      the construction of silicon strip detector modules for the
                      ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were
                      tested using three UV cure glues in comparison with the
                      current baseline glue (a non-conductive epoxy).The impact of
                      irradiation on the chemical composition of all adhesives
                      under investigation was studied using three standard methods
                      for chemical analysis: quadrupole time-of-flight mass
                      spectroscopy, gel permeability chromatography and gas
                      chromatography combined with mass spectrometry (GC-MS).
                      GC-MS analyses of glue sample extracts before and after
                      irradiation showed molecule cross-linking and broken
                      chemical bonds to different extents and allowed to quantify
                      the radiation hardness of the adhesives under
                      investigation.Probe station measurements were used to
                      investigate electrical characteristics of sensors partially
                      covered with adhesives in comparison with sensors without
                      adhesives. Leakage current, bulk capacitance, inter-strip
                      capacitance and surface resistance were measured before and
                      after gluing, after irradiation and after temperature
                      cycling. The presence of glue on the active sensor area was
                      found to increase the sensor leakage current and inter-strip
                      capacitance and frequently led to early sensor breakdowns.
                      Temperature cycling and irradiations reduced adverse effects
                      due to glue to a small noise difference between sensors with
                      and without glue.Charge collection efficiency measurements
                      in a $\beta$-source setup were used to study the influence
                      of adhesives on the silicon bulk. All sensors under
                      investigation showed equivalent charge collection
                      efficiencies for sensors with and without glue, as well as
                      signal-to-noise ratios above the required minimum of ten for
                      the foreseen bias voltage. Before irradiation, sensors with
                      glue showed increased cluster sizes, which could be
                      attributed to fluorescence effects inside the glue using
                      testbeam measurements.During testbeam studies, sensor strips
                      were found to respond inhomogeneously in bond pad regions.
                      Follow-up measurements confirmed that the presence of bond
                      pads affects the electric field within a sensor and leads to
                      additional charge being collected around bond pads. As a
                      result of these findings, the sensor bond pad layout was
                      modified in order to minimise reduced tracking resolution
                      caused by shifted strip responses.},
      cin          = {ATLAS},
      cid          = {I:(DE-H253)ATLAS-20120731},
      pnm          = {632 - Detector technology and systems (POF3-632)},
      pid          = {G:(DE-HGF)POF3-632},
      experiment   = {EXP:(DE-H253)LHC-Exp-ATLAS-20150101},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)29 / PUB:(DE-HGF)11},
      doi          = {10.3204/PUBDB-2018-01870},
      url          = {https://bib-pubdb1.desy.de/record/402646},
}