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@PHDTHESIS{Donegani:333246,
      author       = {Donegani, Elena Maria},
      othercontributors = {Garutti, Erika and Fretwurst, Eckhart},
      title        = {{E}nergy-{D}ependent {P}roton {D}amage in {S}ilicon},
      school       = {Universität Hamburg},
      type         = {Dissertation},
      address      = {Hamburg},
      publisher    = {Verlag Deutsches Elektronen-Synchrotron},
      reportid     = {PUBDB-2017-08798, DESY-THESIS-2017-042},
      series       = {DESY-THESIS},
      pages        = {217},
      year         = {2017},
      note         = {Dissertation, Universität Hamburg, 2017},
      abstract     = {Non Ionizing Energy Loss (NIEL) in the sensor bulk is a
                      limiting factor for the lifetime of silicon detectors. In
                      this work, the proton-energy dependent bulk-damage is
                      studied in n- and p-type silicon pad diodes. The samples are
                      thin (200 μm thick), and oxygen enriched (bulk material
                      types: MCz, standard or deep-diffused FZ). Irradiations are
                      performed with 23 MeV, 188 MeV and 23 GeV protons; the 1 MeV
                      neutron equivalent fluence assumes selected values in the
                      range [0.1, 3]·10$^{14}$cm$^{−2}$. In reverse bias,
                      Current-Voltage (IV) and Capacitance-Voltage (CV)
                      measurements are performed to electrically characterise the
                      samples; in forward bias, IV and CV measurements point out
                      the transition from lifetime to relaxation-like
                      semiconductor after irradiation. By means of Thermally
                      Stimulated Current (TSC) measurements, 13 bulk defects have
                      been found after proton irradiation. Firstly, TSC spectra
                      are analysed to obtain defect concentrations after defect
                      filling at the conventional temperature T$_{fill}$ = 10 K.
                      Secondly, temperature dependent capture coefficients of bulk
                      defects are explained, accordi (T$_{fill}$ < 130 K).
                      Thirdly, a new method based on the SRH statistics and
                      accounting for cluster-induced shift in activation energy is
                      proposed; it allows to fully characterise bulk defects (in
                      terms of activation energy, concentration and majority
                      capture cross-section) and to distinguish between point- and
                      cluster-like defects. A correlation is noted between the
                      leakage current and the concentration of three deep defects
                      (namely the V$_2$, V$_3$ and H(220K) defects), for all the
                      investigated bulk materials and types, and after all the
                      considered proton energies and fluences. At least five
                      defects are found to be responsible for the space charge,
                      with positive contributions from the E(30K) and B$_i$O$_i$
                      defects, or negative contributions from three deep acceptors
                      H(116K), H(140K) and H(152K).},
      cin          = {UNI/EXP},
      cid          = {$I:(DE-H253)UNI_EXP-20120731$},
      pnm          = {632 - Detector technology and systems (POF3-632) / PHGS,
                      VH-GS-500 - PIER Helmholtz Graduate School
                      $(2015_IFV-VH-GS-500)$},
      pid          = {G:(DE-HGF)POF3-632 / $G:(DE-HGF)2015_IFV-VH-GS-500$},
      experiment   = {EXP:(DE-MLZ)NOSPEC-20140101},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:gbv:18-88182},
      doi          = {10.3204/PUBDB-2017-08798},
      url          = {https://bib-pubdb1.desy.de/record/333246},
}