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@PHDTHESIS{Yildirim:317686,
author = {Yildirim, Eda},
othercontributors = {Gregor, Ingrid-Maria and Tackmann, Kerstin},
title = {{C}ollected {C}harge and {L}orentz {A}ngle {M}easurement on
{N}on-irradiated and {I}rradiated {ATLAS} {S}ilicon
{M}icro-{S}trip {S}ensors for the {HL}-{LHC}},
school = {Universität Hamburg},
type = {Dr.},
address = {Hamburg},
publisher = {Verlag Deutsches Elektronen-Synchrotron},
reportid = {PUBDB-2017-00842, DESY-THESIS-2017-005},
series = {DESY-THESIS},
pages = {125},
year = {2017},
note = {Universität Hamburg, Diss., 2016},
abstract = {In this thesis, the collected charge and the Lorentz angle
on non-irradiated and the irradiatedminiature of the current
test silicon micro-strip sensors (ATLAS12) of the future
ATLAS innertracker are measured. The samples are irradiated
up to 51015 1MeV neq=cm2 and some of themalso measured after
short-term annealing (80 min at 60 C). The measurements are
performedat the DESY II test beam, which provides the
advantage of tracking to suppress noise hits.The collected
charge is measured at various bias voltages for each sample.
The results arecompared with the measurements performed
using a Sr90 radioactive source. It is shown thatthe
measurements with beam and radioactive source are consistent
with each other, and theadvantage of tracking at the beam
measurements provides the measurement of collected chargeon
highly irradiated sensors at lower bias voltages.The Lorentz
angle is measured for each sample at dierent magnetic eld
strengths between0T and 1 T, the results are extrapolated to
2 T, which is the magnetic eld in the inner trackerof the
ATLAS detector. Most of the measurements are performed at
--500V bias voltage,which is the planned operation bias
voltage of the future strip tracker. Some samples are
alsomeasured at dierent bias voltages to observe the eect of
bias voltage on the Lorentz angle. Thesignal reconstruction
of the strip sensors are performed using the lowest possible
signal-to-noisethresholds. For non-irradiated samples, the
measured Lorentz angle agrees with the prediction ofthe BFK
model. On the irradiated samples, the results suggest that
the Lorentz angle decreaseswith increasing bias voltage due
to the increasing electric eld in the sensor. The Lorentz
angledecreases with increasing irradiation level; however,
if the sample is under-depleted, the eectof electric eld
dominates and the Lorentz angle increases. Once the
irradiation level becomestoo high, hence the collected
charge is small due to increasing trapping, the visible eect
ofthe Lorentz force in the detector decreases, therefore the
measured Lorentz angle decreases.Short-term annealing
increases the Lorentz angle, due to the decrease in full
depletion voltage.However, on the highly irradiated samples
the annealing further decreases the Lorentz angle.The
analysis is also re-performed using the signal threshold
that will be used in the digitalreadout of strip sensors at
the future ATLAS inner tracker. It is seen that the visible
eect ofthe Lorentz force decreases at lower uences due to
the higher threshold.},
cin = {ATLAS},
cid = {I:(DE-H253)ATLAS-20120731},
pnm = {632 - Detector technology and systems (POF3-632)},
pid = {G:(DE-HGF)POF3-632},
experiment = {EXP:(DE-H253)TestBeamline24-20150101 /
EXP:(DE-H253)LHC-Exp-ATLAS-20150101},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)29 / PUB:(DE-HGF)11},
doi = {10.3204/PUBDB-2017-00842},
url = {https://bib-pubdb1.desy.de/record/317686},
}