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| 001 | 299479 | ||
| 005 | 20250730113939.0 | ||
| 024 | 7 | _ | |a 10.1021/acsnano.5b02877 |2 doi |
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| 100 | 1 | _ | |a Wu, Han-Chun |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries |
| 260 | _ | _ | |a Washington, DC |c 2015 |b Soc. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 500 | _ | _ | |a (c) American Chemical Society |
| 520 | _ | _ | |a Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on–off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on–off ratio of 10$^4$ by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on–off current ratios using graphene on cubic-SiC. |
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| 700 | 1 | _ | |a Chaika, Alexander |0 P:(DE-H253)PIP1017205 |b 1 |e Corresponding author |
| 700 | 1 | _ | |a Huang, Tsung-Wei |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Syrlybekov, Askar |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Abib, Mourad |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Aristov, Victor |0 P:(DE-H253)PIP1016125 |b 5 |e Corresponding author |
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| 700 | 1 | _ | |a Sánchez-Barriga, Jaime |0 P:(DE-HGF)0 |b 9 |
| 700 | 1 | _ | |a Mandal, Partha Sarathi |0 P:(DE-HGF)0 |b 10 |
| 700 | 1 | _ | |a Varykhalov, Andrei Yu. |0 P:(DE-HGF)0 |b 11 |
| 700 | 1 | _ | |a Niu, Yuran |0 P:(DE-HGF)0 |b 12 |
| 700 | 1 | _ | |a Murphy, Barry E. |0 P:(DE-HGF)0 |b 13 |
| 700 | 1 | _ | |a Krasnikov, Sergey A. |0 P:(DE-HGF)0 |b 14 |
| 700 | 1 | _ | |a Lübben, Olaf |0 P:(DE-HGF)0 |b 15 |
| 700 | 1 | _ | |a Wang, Jing Jing |0 P:(DE-HGF)0 |b 16 |
| 700 | 1 | _ | |a Liu, Huajun |0 P:(DE-HGF)0 |b 17 |
| 700 | 1 | _ | |a Yang, Li |0 P:(DE-HGF)0 |b 18 |
| 700 | 1 | _ | |a Zhang, Hongzhou |0 P:(DE-HGF)0 |b 19 |
| 700 | 1 | _ | |a Abid, Mohamed |0 P:(DE-HGF)0 |b 20 |
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| 700 | 1 | _ | |a Chang, Ching-Ray |0 P:(DE-HGF)0 |b 23 |
| 700 | 1 | _ | |a Shvets, Igor |0 P:(DE-HGF)0 |b 24 |
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