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@ARTICLE{Wu:299479,
      author       = {Wu, Han-Chun and Chaika, Alexander and Huang, Tsung-Wei and
                      Syrlybekov, Askar and Abib, Mourad and Aristov, Victor and
                      Molodtsova, Olga and Babenkov, Sergey and Marchenko, D. and
                      Sánchez-Barriga, Jaime and Mandal, Partha Sarathi and
                      Varykhalov, Andrei Yu. and Niu, Yuran and Murphy, Barry E.
                      and Krasnikov, Sergey A. and Lübben, Olaf and Wang, Jing
                      Jing and Liu, Huajun and Yang, Li and Zhang, Hongzhou and
                      Abid, Mohamed and Janabi, Yahya T. and Molotkov, Sergei N.
                      and Chang, Ching-Ray and Shvets, Igor},
      title        = {{T}ransport {G}ap {O}pening and {H}igh {O}n–{O}ff
                      {C}urrent {R}atio in {T}rilayer {G}raphene with
                      {S}elf-{A}ligned {N}anodomain {B}oundaries},
      journal      = {ACS nano},
      volume       = {9},
      number       = {9},
      issn         = {1936-0851},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {PUBDB-2016-01979},
      pages        = {8967-8975},
      year         = {2015},
      note         = {(c) American Chemical Society},
      abstract     = {Trilayer graphene exhibits exceptional electronic
                      properties that are of interest both for fundamental science
                      and for technological applications. The ability to achieve a
                      high on–off current ratio is the central question in this
                      field. Here, we propose a simple method to achieve a current
                      on–off ratio of 10$^4$ by opening a transport gap in
                      Bernal-stacked trilayer graphene. We synthesized
                      Bernal-stacked trilayer graphene with self-aligned periodic
                      nanodomain boundaries (NBs) on the technologically relevant
                      vicinal cubic-SiC(001) substrate and performed electrical
                      measurements. Our low-temperature transport measurements
                      clearly demonstrate that the self-aligned periodic NBs can
                      induce a charge transport gap greater than 1.3 eV. More
                      remarkably, the transport gap of ∼0.4 eV persists even at
                      100 K. Our results show the feasibility of creating new
                      electronic nanostructures with high on–off current ratios
                      using graphene on cubic-SiC.},
      cin          = {FS-PE},
      ddc          = {540},
      cid          = {I:(DE-H253)FS-PE-20120731},
      pnm          = {6214 - Nanoscience and Materials for Information Technology
                      (POF3-621) / 6G3 - PETRA III (POF3-622)},
      pid          = {G:(DE-HGF)POF3-6214 / G:(DE-HGF)POF3-6G3},
      experiment   = {EXP:(DE-H253)P-P04-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000361935800035},
      pubmed       = {pmid:26302083},
      doi          = {10.1021/acsnano.5b02877},
      url          = {https://bib-pubdb1.desy.de/record/299479},
}