TY  - JOUR
AU  - Wu, Han-Chun
AU  - Chaika, Alexander
AU  - Huang, Tsung-Wei
AU  - Syrlybekov, Askar
AU  - Abib, Mourad
AU  - Aristov, Victor
AU  - Molodtsova, Olga
AU  - Babenkov, Sergey
AU  - Marchenko, D.
AU  - Sánchez-Barriga, Jaime
AU  - Mandal, Partha Sarathi
AU  - Varykhalov, Andrei Yu.
AU  - Niu, Yuran
AU  - Murphy, Barry E.
AU  - Krasnikov, Sergey A.
AU  - Lübben, Olaf
AU  - Wang, Jing Jing
AU  - Liu, Huajun
AU  - Yang, Li
AU  - Zhang, Hongzhou
AU  - Abid, Mohamed
AU  - Janabi, Yahya T.
AU  - Molotkov, Sergei N.
AU  - Chang, Ching-Ray
AU  - Shvets, Igor
TI  - Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries
JO  - ACS nano
VL  - 9
IS  - 9
SN  - 1936-0851
CY  - Washington, DC
PB  - Soc.
M1  - PUBDB-2016-01979
SP  - 8967-8975
PY  - 2015
N1  - (c) American Chemical Society
AB  - Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on–off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on–off ratio of 10<sup>4</sup> by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on–off current ratios using graphene on cubic-SiC.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000361935800035
C6  - pmid:26302083
DO  - DOI:10.1021/acsnano.5b02877
UR  - https://bib-pubdb1.desy.de/record/299479
ER  -