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@ARTICLE{Lushchik:296998,
      author       = {Lushchik, A. and Lushchik, Ch. and Popov, A. I. and
                      Schwartz, K. and Shablonin, E. and Vasil’chenko, E.},
      title        = {{I}nfluence of complex impurity centres on radiation damage
                      in wide-gap metal oxides},
      journal      = {Nuclear instruments $\&$ methods in physics research / B},
      volume       = {374},
      issn         = {0168-583X},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PUBDB-2016-01751},
      pages        = {90-96},
      year         = {2015},
      note         = {(c) EURATOM. Published by Elsevier B.V.},
      abstract     = {Different mechanisms of radiation damage of wide-gap metal
                      oxides as well as a dual influence of impurity ions on the
                      efficiency of radiation damage have been considered on the
                      example of binary ionic MgO and complex ionic–covalent
                      $Lu_{3}Al_{5}O_{12}$ single crystals. Particular emphasis
                      has been placed on irradiation with $\sim$2 GeV heavy ions
                      ($^{197}Au, ^{209}Bi, ^{238}U$, fluence of 10$^{12}$
                      ions/cm$^{2}$) providing extremely high density of
                      electronic excitations within ion tracks. Besides knock-out
                      mechanism for Frenkel pair formation, the additional
                      mechanism through the collapse of mobile discrete breathers
                      at certain lattice places (e.g., complex impurity centres)
                      leads to the creation of complex defects that involve a
                      large number of host atoms. The experimental manifestations
                      of the radiation creation of intrinsic and impurity antisite
                      defects (Lu|$_{Al}$ or Ce|$_{Al}$ – a heavy ion in a wrong
                      cation site) have been detected in LuAG and $LuAG:Ce^{3+}$
                      single crystals. Light doping of LuAG causes a small
                      enhancement of radiation resistance, while pair impurity
                      centres (for instance, $Ce|_{Lu}–Ce|_{Al}$ or
                      $Cr^{3+}–Cr^{3+}$ in MgO) are formed with a rise of
                      impurity concentration. These complex impurity centres as
                      well as radiation-induced intrinsic antisite defects
                      (Lu|$_{Al}$ strongly interacting with Lu in a regular site)
                      tentatively serve as the places for breathers collapse, thus
                      decreasing the material resistance against dense
                      irradiation.},
      cin          = {DOOR},
      ddc          = {530},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      experiment   = {EXP:(DE-H253)D-I-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000375819500017},
      doi          = {10.1016/j.nimb.2015.07.004},
      url          = {https://bib-pubdb1.desy.de/record/296998},
}