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@ARTICLE{Wierzchowski:293279,
      author       = {Wierzchowski, W. and Turos, A. and Wieteska, K. and
                      Stonert, A. and Ratajczak, R. and Jóźwik, P. and Wilhelm,
                      R. and Akhamadaliev, S. and Mazur, K. and Paulmann, C.},
      title        = {{I}on implantation of the 4{H} {S}i{C} epitaxial layers and
                      substrates with 2 {M}e{V} $\mathrm{{S}e^{+}}$ and
                      1 {M}e{V} $\mathrm{{A}l^{+}}$ ions},
      journal      = {X-ray spectrometry},
      volume       = {44},
      number       = {5},
      issn         = {0049-8246},
      address      = {New York, NY [u.a.]},
      publisher    = {Wiley},
      reportid     = {PUBDB-2016-00434},
      pages        = {371 - 378},
      year         = {2015},
      note         = {(c) John Wiley $\&$ Sons, Ltd. Post referee full text in
                      progress.},
      abstract     = {The implantations were performed in 4H silicon carbide
                      homoepitaxial layers deposited on (00.1) substrates with 8°
                      offcut, and reference 4H-SiC substrates. The 2 Se$^{+}$
                      ions and 1 MeV Al$^{+}$ ions were implanted with four
                      fluences subsequently increased by the factor of 4–5×.
                      The samples were studied by means of X-ray diffraction
                      topography, high-resolution diffractometry, specular X-ray
                      reflectometry, and Rutherford backscattering
                      spectrometry\channeling method. The dislocation density in
                      the samples evaluated from the diffraction topographs did
                      not exceed 5 × 10$^{3 }$cm$^{−2}$. The
                      representative roughness values evaluated from the
                      reflectometric measurements was 2.3 ± 0.1 nm for the
                      substrates and less than 1.4 ± 0.1 nm for the
                      epitaxial layers.A significantly higher damage level in the
                      case of 2 MeV Se$^{+}$ ions in comparison with 1 MeV
                      Al$^{+}$ ion and a linear increase of the strain with the
                      fluence was indicated, but the highest doses of selenium
                      ions caused the amorphization of the implanted layer. It was
                      also possible to obtain a good fitting of the theoretical
                      and experimental diffraction curves approximating the strain
                      profiles by the distribution of the point defects calculated
                      with the SRIM 2008 code. It was confirmed that the maximum
                      coming from surface damages observed in channeling spectra
                      of the virgin substrate wafers was significantly higher than
                      in the case of epitaxial layers.},
      cin          = {UHH Geo},
      ddc          = {530},
      cid          = {$I:(DE-H253)UHH_Geo-20120814$},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      experiment   = {EXP:(DE-H253)D-F1-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000360088600010},
      doi          = {10.1002/xrs.2642},
      url          = {https://bib-pubdb1.desy.de/record/293279},
}