000293279 001__ 293279
000293279 005__ 20250730113908.0
000293279 0247_ $$2doi$$a10.1002/xrs.2642
000293279 0247_ $$2ISSN$$a0049-8246
000293279 0247_ $$2ISSN$$a1097-4539
000293279 0247_ $$2WOS$$aWOS:000360088600010
000293279 0247_ $$2openalex$$aopenalex:W1502987029
000293279 037__ $$aPUBDB-2016-00434
000293279 041__ $$aEnglish
000293279 082__ $$a530
000293279 1001_ $$0P:(DE-H253)PIP1007939$$aWierzchowski, W.$$b0$$eCorresponding author
000293279 245__ $$aIon implantation of the 4H SiC epitaxial layers and substrates with 2 MeV $\mathrm{Se^{+}}$ and 1 MeV $\mathrm{Al^{+}}$ ions
000293279 260__ $$aNew York, NY [u.a.]$$bWiley$$c2015
000293279 3367_ $$2DRIVER$$aarticle
000293279 3367_ $$2DataCite$$aOutput Types/Journal article
000293279 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1519915066_25392
000293279 3367_ $$2BibTeX$$aARTICLE
000293279 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000293279 3367_ $$00$$2EndNote$$aJournal Article
000293279 500__ $$a(c) John Wiley & Sons, Ltd. Post referee full text in progress.
000293279 520__ $$aThe implantations were performed in 4H silicon carbide homoepitaxial layers deposited on (00.1) substrates with 8° offcut, and reference 4H-SiC substrates. The 2 Se$^{+}$ ions and 1 MeV Al$^{+}$ ions were implanted with four fluences subsequently increased by the factor of 4–5×. The samples were studied by means of X-ray diffraction topography, high-resolution diffractometry, specular X-ray reflectometry, and Rutherford backscattering spectrometry\channeling method. The dislocation density in the samples evaluated from the diffraction topographs did not exceed 5 × 10$^{3 }$cm$^{−2}$. The representative roughness values evaluated from the reflectometric measurements was 2.3 ± 0.1 nm for the substrates and less than 1.4 ± 0.1 nm for the epitaxial layers.A significantly higher damage level in the case of 2 MeV Se$^{+}$ ions in comparison with 1 MeV Al$^{+}$ ion and a linear increase of the strain with the fluence was indicated, but the highest doses of selenium ions caused the amorphization of the implanted layer. It was also possible to obtain a good fitting of the theoretical and experimental diffraction curves approximating the strain profiles by the distribution of the point defects calculated with the SRIM 2008 code. It was confirmed that the maximum coming from surface damages observed in channeling spectra of the virgin substrate wafers was significantly higher than in the case of epitaxial layers.
000293279 536__ $$0G:(DE-HGF)POF3-899$$a899 - ohne Topic (POF3-899)$$cPOF3-899$$fPOF III$$x0
000293279 588__ $$aDataset connected to CrossRef
000293279 693__ $$0EXP:(DE-H253)D-F1-20150101$$1EXP:(DE-H253)DORISIII-20150101$$6EXP:(DE-H253)D-F1-20150101$$aDORIS III$$fDORIS Beamline F1$$x0
000293279 7001_ $$aTuros, A.$$b1
000293279 7001_ $$aWieteska, K.$$b2
000293279 7001_ $$aStonert, A.$$b3
000293279 7001_ $$aRatajczak, R.$$b4
000293279 7001_ $$aJóźwik, P.$$b5
000293279 7001_ $$aWilhelm, R.$$b6
000293279 7001_ $$aAkhamadaliev, S.$$b7
000293279 7001_ $$aMazur, K.$$b8
000293279 7001_ $$aPaulmann, C.$$b9
000293279 773__ $$0PERI:(DE-600)1479999-6$$a10.1002/xrs.2642$$gVol. 44, no. 5, p. 371 - 378$$n5$$p371 - 378$$tX-ray spectrometry$$v44$$x0049-8246$$y2015
000293279 8564_ $$uhttp://onlinelibrary.wiley.com/doi/10.1002/xrs.2642/abstract
000293279 909CO $$ooai:bib-pubdb1.desy.de:293279$$pVDB
000293279 9101_ $$0I:(DE-HGF)0$$6P:(DE-H253)PIP1007939$$aExternes Institut$$b0$$k>Extern
000293279 9131_ $$0G:(DE-HGF)POF3-899$$1G:(DE-HGF)POF3-890$$2G:(DE-HGF)POF3-800$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bProgrammungebundene Forschung$$lohne Programm$$vohne Topic$$x0
000293279 9141_ $$y2015
000293279 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000293279 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000293279 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bX-RAY SPECTROM : 2014
000293279 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000293279 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000293279 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000293279 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000293279 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000293279 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000293279 9201_ $$0I:(DE-H253)UHH_Geo-20120814$$kUHH Geo$$lexterne Institute im Bereich Photon Science$$x0
000293279 980__ $$ajournal
000293279 980__ $$aVDB
000293279 980__ $$aI:(DE-H253)UHH_Geo-20120814
000293279 980__ $$aUNRESTRICTED