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@ARTICLE{Radisavljevic:288535,
      author       = {Radisavljevic, Ivana and Novakovic, Nikola and Nebojsa,
                      Romcevic and Miodrag, Mitric and Kuzmanovic, Bojana and
                      Bojanic, Slobodan and Ivanovic, Nenad},
      title        = {{E}lectronic aspects of formation and properties of local
                      structures around {M}n in
                      $\mathrm{{C}d_{1-x}{M}n_{x}{T}e_{1-y}{S}e_{y}}$},
      journal      = {Materials chemistry and physics},
      volume       = {167},
      issn         = {0254-0584},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PUBDB-2015-05004},
      pages        = {236 - 245},
      year         = {2015},
      note         = {(c) Elsevier B.V. Post referee full text in progress.
                      Embargo for full text 1 year from 23.10.2015.},
      abstract     = {Local electronic and structural features around Mn in
                      Cd$_{1-x}$Mn$_{x}$Te$_{0.97}$Se$_{0.03}$ (x = 0.02; 0.05;
                      0.1; y = 0.03) were studied by means of X-ray Absorption
                      Fine Structure (XAFS) techniques. Manganese ions with an
                      average valence 2+, are found to be well incorporated into
                      the host CdTe lattice, with clear preference forTe atoms as
                      the first neighbors. However, Mn and Te are found to form
                      two essentially different types of bonds, one short, strong
                      and directional (cubic MnTe-alike bond), and three much
                      longer, predominantly ionic in nature (hexagonal MnTe-alike
                      bonds), thereby distorting the tetrahedral coordination
                      around Mn. The origin of peculiar Mn-Te bonds distribution
                      and details of their nature and strength are further
                      elaborated by employing the first principle electronic
                      structure calculations. That way a thorough insight in
                      impact of the Mn-Te bond length variation on the electronic
                      structure of the compound is obtained.The relations
                      established between the local structures and electronic
                      properties offer a reliable procedure for detailed analysis
                      of the structural and electronic consequences of the
                      3d-transition metals (TM) incorporation in II-VI
                      semiconductor host. Clear distinction between various
                      influences makes the procedure easily adoptable also to the
                      studies of TM impurities in other semiconductors.},
      cin          = {DOOR},
      ddc          = {540},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      experiment   = {EXP:(DE-H253)D-A1-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000366070500033},
      doi          = {10.1016/j.matchemphys.2015.10.038},
      url          = {https://bib-pubdb1.desy.de/record/288535},
}