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@ARTICLE{Mazur:288328,
      author       = {Mazur, K. and Wieteska, K. and Wierzchowski, W. and
                      Sarnecki, J. and Lipiński, D. and Brzozowski, A. and
                      Paulmann, C.},
      title        = {{H}igh {R}esolution {X}-{R}ay {D}iffractometric,
                      {T}opographic and {R}eflectometric {S}tudies of {E}pitaxial
                      {L}ayers on {P}orous {S}ilicon {D}estined for {E}xfoliation},
      journal      = {X-ray spectrometry},
      volume       = {44},
      number       = {5},
      issn         = {0049-8246},
      address      = {New York, NY [u.a.]},
      publisher    = {Wiley},
      reportid     = {PUBDB-2015-04924},
      pages        = {363-370},
      year         = {2015},
      note         = {(c) John Wiley $\&$ Sons, Ltd.},
      abstract     = {The presently studied substrates for manufacturing
                      freestanding silicon epitaxial layers contained two porous
                      layers with different porosities. The upper layers of
                      significantly lower porosity after annealing provided smooth
                      surfaces for deposition of epitaxial layers and the deeper
                      layers of greater porosity enabling easier exfoliation
                      epitaxial foil. The layered structures have been studied by
                      means of synchrotron diffraction topography and by recording
                      of rocking curves from small local area. The most effective
                      method of revealing defects in freestanding exfoliated
                      layers were Bragg-case projection topographs and ‘zebra’
                      pattern monochromatic beam topographs providing a map of
                      sample curvature. The samples have been additionally
                      examined by means of high-resolution diffractometry and
                      reflectometry.The porous layers without epitaxial deposition
                      provided strong narrow maximum at low angle side of the
                      substrate maximum common for both of the porous layers. The
                      most probable effect of the deposition of epitaxial layer is
                      the decrease of lattice parameter in the upper layer with
                      lower porosity, which provided the maxima in the diffraction
                      curves located on low angle side of the substrate maximum.
                      The topographic investigations revealed some defects in
                      deposited epitaxial layers, connected with some
                      irregularities of the annealed porous layer. Very
                      characteristic common defects were large caverns, overgrown
                      in the epitaxial process with the diameters of several
                      tenths of micrometers and defects (possibly the overgrown
                      submicron caverns), associated with some bundles of
                      dislocations resolved in the topographs. In layers of large
                      thickness, the characteristic long black and white stripes
                      along <110> have also been observed, which most probably
                      were stacking faults with dislocation loops.},
      cin          = {DOOR},
      ddc          = {530},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      experiment   = {EXP:(DE-H253)D-E2-20150101 / EXP:(DE-H253)D-F1-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000360088600009},
      doi          = {10.1002/xrs.2641},
      url          = {https://bib-pubdb1.desy.de/record/288328},
}