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000208883 1001_ $$0P:(DE-H253)PIP1008523$$aRyba-Romanowski, W.$$b0
000208883 245__ $$aEffect of substitution of lutetium by gadolinium on emission characteristics of $(Lu_xGd_{1-x})_2SiO_5: Sm^{3+}$ single crystals
000208883 260__ $$aWashington, DC$$bOSA$$c2014
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000208883 520__ $$aSingle crystals of (LuxGd1-x)2SiO5:Sm (0.5 at%) with x = 0.19 (81% Gd3+) and x = 0.11 (89% Gd3+) belonging respectively to the C2/c and P21/c space groups were grown by the Czochralski method under nitrogen atmosphere. Detailed investigation of their spectroscopic properties were performed with the aim of understanding the effect of structural modification on emission characteristics of incorporated Sm3+ ions with a special attention directed to a laser potential associated with yellow emission line. It was inferred from low temperature optical spectra that almost all emission intensity in the host with C2/c symmetry comes from one of two available Sm3+ sites, whereas two Sm3+ sites contribute to emission in the host with P21/c symmetry. Excitation spectra of Sm3+ emission recorded in the VUV-UV region between 100 nm and 350 nm made it possible to locate the energy of CT transition at about 6.11 eV and to assess the low energy limit for the 4f5→ 4f45d1 transitions of Sm3+ to about 6.81 eV. It implies that in the two systems studied these energies are advantageously high thereby preventing the contribution of intense allowed transitions to an adverse excited state absorption of both blue pump radiation and yellow emission. Experiments of optical amplification of yellow emission were performed employing a pump-and-probe technique in order to verify this implication. It was found that for a LGSO:Sm3+ crystal having the C2/c symmetry an increase of the pump power density from 20 mJ/cm2 to 50 mJ/cm2 at a constant power probe density of 150 μW/cm2 brings about a positive gain growing from about 0.25 to 2 [cm−1]. In the same conditions a maximum gain value of 1 cm−1 was measured for LGSO:Sm3+ crystal having the P21/c symmetry. It was concluded that the former system is promising for the design of all-solid-state yellow lasers. 
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000208883 7001_ $$0P:(DE-H253)PIP1012310$$aStrzęp, A.$$b1$$eCorresponding Author
000208883 7001_ $$0P:(DE-H253)PIP1008993$$aLisiecki, R.$$b2
000208883 7001_ $$0P:(DE-HGF)0$$aBerkowski, M.$$b3
000208883 7001_ $$0P:(DE-HGF)0$$aRodriguez-Rodriguez, H.$$b4
000208883 7001_ $$0P:(DE-HGF)0$$aMartin, I. R.$$b5
000208883 773__ $$0PERI:(DE-600)2619914-2$$a10.1364/OME.4.000739$$gVol. 4, no. 4, p. 739 -$$n4$$p739 $$tOptical Materials Express$$v4$$x2159-3930$$y2014
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