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@ARTICLE{Budnitsky:207206,
      author       = {Budnitsky, D. and Tyazhev, Anton and Novikov, V. and
                      Zarubin, A. and Tolbanov, O. and Skakunov, M. and Hamann, E.
                      and Fauler, A. and Fiederle, M. and Procz, S. and Graafsma,
                      H. and Ryabkov, S.},
      title        = {{C}hromium-{C}ompensated {G}a{A}s {D}etector {M}aterial and
                      {S}ensors},
      journal      = {Journal of Instrumentation},
      volume       = {9},
      number       = {07},
      issn         = {1748-0221},
      address      = {London},
      publisher    = {Inst. of Physics},
      reportid     = {PUBDB-2015-01189},
      pages        = {C07011},
      year         = {2014},
      note         = {OA},
      abstract     = {Results obtained from numerical calculations of and
                      experimental studies on the pulse height distribution
                      inherent in ionizing radiation gallium arsenide sensors as a
                      function of the design features of the devices and
                      electrophysical characteristics of the detector material are
                      presented. It is shown that the pulse height distribution is
                      defined by the distribution pattern of the nonequilibrium
                      charge carrier lifetime and by the electric field profile in
                      the bulk of the sensor. Investigations on the detector
                      sensitivity to X-ray energies in the range between 40 and
                      150 keV were performed. The sensor polarization was found to
                      produce only a marginal effect compensated by an increase in
                      the bias voltage. Prototype pixel sensors measuring 256 ×
                      256 and 512 × 768 pixels with a 55 μm pitch and a 500 μm
                      thick sensitive layer were produced. The dependence of the
                      photocurrent and count rate on the X-ray radiation intensity
                      and bias voltage applied to the sensor was examined. In the
                      40–80 keV energy range, the maximum count rate amounted to
                      800 kHz/pixel for a negative sensor bias voltage of 800 V.
                      The sensors are demonstrated to provide spatial resolution
                      varying with the pixel pitch and to enable high-quality
                      X-ray images to be obtained.},
      organization  = {15th International Workshop on
                       Radiation Imaging Detectors, Paris
                       (France)},
      cin          = {FS-DS},
      ddc          = {610},
      cid          = {I:(DE-H253)FS-DS-20120731},
      pnm          = {541 - Photons (POF2-541)},
      pid          = {G:(DE-HGF)POF2-541},
      experiment   = {EXP:(DE-MLZ)NOSPEC-20140101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000340050700011},
      doi          = {10.1088/1748-0221/9/07/C07011},
      url          = {https://bib-pubdb1.desy.de/record/207206},
}