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@ARTICLE{Biermanns:206415,
      author       = {Biermanns, Andreas and Dimakis, Emmanouil and Davydok,
                      Anton and Sasaki, Takuo and Geelhaar, Lutz and Takahasi,
                      Masamitu and Pietsch, Ullrich},
      title        = {{R}ole of {L}iquid {I}ndium in the {S}tructural {P}urity of
                      {W}urtzite {I}n{A}s {N}anowires {T}hat {G}row on {S}i(111)},
      journal      = {Nano letters},
      volume       = {14},
      number       = {12},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {PUBDB-2015-00892},
      pages        = {6878 - 6883},
      year         = {2014},
      abstract     = {InAs nanowires that grow catalyst-free along the [111]
                      crystallographic orientation are prone to
                      wurtzite-zincblende polytypism, making the control of the
                      crystal phase highly challenging. In this work, we explore
                      the dynamic relation between the growth conditions and the
                      structural composition of the nanowires using time-resolved
                      X-ray scattering and diffraction measurements during the
                      growth by molecular beam epitaxy. A spontaneous buildup of
                      liquid indium is directly observed in the beginning of the
                      growth process and associated with the simultaneous
                      nucleation of InAs nanowires predominantly in the wurtzite
                      phase. The highly arsenic-rich growth conditions that we
                      used limited the existence of the liquid indium to a short
                      time interval, which is defined as the nucleation phase.
                      After their nucleation, the nanowires grow in the absence of
                      liquid indium, and with a highly defective wurtzite
                      structure. Complementary ex-situ diffuse X-ray scattering
                      measurements and modeling revealed that this structural
                      degradation is due to the formation of densely spaced
                      stacking faults. Thus, high wurtzite phase purity is
                      associated with the presence of liquid indium. This finding
                      implies that pure wurtzite nanowires may be obtained only if
                      the growth is performed under the continuous presence of
                      liquid indium at the growth interface, that is, in the
                      vapor–liquid–solid mode.},
      cin          = {DOOR},
      ddc          = {540},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {PETRA Beamline P08 (POF2-54G14)},
      pid          = {G:(DE-H253)POF2-P08-20130405},
      experiment   = {EXP:(DE-H253)P-P08-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000346322800020},
      pubmed       = {pmid:25400142},
      doi          = {10.1021/nl502878a},
      url          = {https://bib-pubdb1.desy.de/record/206415},
}