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@INPROCEEDINGS{Walczyk:192634,
      author       = {Walczyk, Christian and Sowinska, Malgorzata and Walczyk,
                      Damian and Calka, Pauline and Schroeder, Thomas},
      title        = {{R}esistive {S}witching and {C}urrent {S}tatus of
                      ${H}f{O}_{2}$-{B}ased {RRAM}},
      reportid     = {PUBDB-2014-04216},
      year         = {2014},
      abstract     = {The integration of embedded non-volatile memory
                      (eNVM)devices in a Si CMOS manufacturing process requires to
                      identifycost-effective process flow strategies and Si CMOS
                      compatiblematerials. Hafnium dioxide (HfO2) is a promising
                      dielectric forfuture Resistive Random-Access Memory (RRAM)
                      applications.Following the “More than Moore” (MtM)
                      approach, the advantageis given by the fact that the
                      back-end-of-line (BEOL) integration ofHfO2-based
                      metal-insulator-metal (MIM) memory cells allows
                      acost-effective realization of embedded RRAMs. However, it
                      stillremains difficult in HfO2-based RRAM to further reduce
                      energydissipation and in addition to increase reliability
                      for system-onchip(SoC) applications. Hence, a detailed
                      understanding of theatomic-scale mechanism and the
                      identification of the materialchanges within the insulator
                      are necessary. To address this issue,RRAM integration
                      aspects were accompanied by fundamentalmaterials research
                      studies. First, non-destructive and in-operandoHard X-ray
                      Photoelectron Spectroscopy (HAXPES) wasperformed to
                      correlate the resistive switching effect with
                      materialsmodifications at the Ti/HfO2 interface. The
                      fundamental materialsresearch insights were then transferred
                      to integrated 1T1R devicesin 4 kbit RRAM test arrays.},
      month         = {May},
      date          = {2014-05-11},
      organization  = {Electrochemical Society, Orlando
                       (USA), 11 May 2014 - 16 May 2014},
      cin          = {DOOR},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {PETRA Beamline P09 (POF2-54G14)},
      pid          = {G:(DE-H253)POF2-P09-20130405},
      experiment   = {EXP:(DE-H253)P-P09-20150101},
      typ          = {PUB:(DE-HGF)8},
      url          = {https://bib-pubdb1.desy.de/record/192634},
}