%0 Conference Paper
%A Walczyk, Christian
%A Sowinska, Malgorzata
%A Walczyk, Damian
%A Calka, Pauline
%A Schroeder, Thomas
%T Resistive Switching and Current Status of HfO<sub>2</sub>-Based RRAM
%M PUBDB-2014-04216
%D 2014
%X The integration of embedded non-volatile memory (eNVM)devices in a Si CMOS manufacturing process requires to identifycost-effective process flow strategies and Si CMOS compatiblematerials. Hafnium dioxide (HfO2) is a promising dielectric forfuture Resistive Random-Access Memory (RRAM) applications.Following the “More than Moore” (MtM) approach, the advantageis given by the fact that the back-end-of-line (BEOL) integration ofHfO2-based metal-insulator-metal (MIM) memory cells allows acost-effective realization of embedded RRAMs. However, it stillremains difficult in HfO2-based RRAM to further reduce energydissipation and in addition to increase reliability for system-onchip(SoC) applications. Hence, a detailed understanding of theatomic-scale mechanism and the identification of the materialchanges within the insulator are necessary. To address this issue,RRAM integration aspects were accompanied by fundamentalmaterials research studies. First, non-destructive and in-operandoHard X-ray Photoelectron Spectroscopy (HAXPES) wasperformed to correlate the resistive switching effect with materialsmodifications at the Ti/HfO2 interface. The fundamental materialsresearch insights were then transferred to integrated 1T1R devicesin 4 kbit RRAM test arrays.
%B Electrochemical Society
%C 11 May 2014 - 16 May 2014, Orlando (USA)
Y2 11 May 2014 - 16 May 2014
M2 Orlando, USA
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%U https://bib-pubdb1.desy.de/record/192634