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@ARTICLE{Zhang:172372,
      author       = {Zhang, J. and Fretwurst, E. and Graafsma, H. and Klanner,
                      R. and Kopsalis, I. and Schwandt, J.},
      title        = {{S}tudy of {X}-ray radiation damage in the {AGIPD} sensor
                      for the {E}uropean {XFEL}},
      journal      = {Journal of Instrumentation},
      volume       = {9},
      number       = {05},
      issn         = {1748-0221},
      address      = {London},
      publisher    = {Inst. of Physics},
      reportid     = {PUBDB-2014-03701},
      pages        = {C05022},
      year         = {2014},
      note         = {Part of 15th International Workshop on Radiation Imaging
                      Detectors (IWORID2013)},
      abstract     = {The European X-ray Free Electron Laser (XFEL), currently
                      being constructed in Hamburg and planned to be operational
                      in 2017 for users, will deliver 27,000 fully coherent, high
                      brilliance X-ray pulses per second with duration less than
                      100 fs. The unique features of the X-ray beam pose major
                      challenges for silicon detectors used at the European XFEL
                      for imaging experiments, in particular a radiation tolerance
                      of silicon sensors for doses up to 1 GGy for 3 years of
                      operation at an operating voltage above 500 V.One of the
                      detectors under development at the European XFEL is the
                      Adaptive Gain Integrating Pixel Detector (AGIPD), which is a
                      hybrid detector system with ASICs bump-bonded to p+n silicon
                      pixel sensors. We have designed the silicon sensors for the
                      AGIPD, which have been fabricated by SINTEF and delivered in
                      the beginning of February 2013. To demonstrate the
                      performance of the AGIPD sensor with regard to radiation
                      hardness, mini-sensors with the same pixel and guard-ring
                      designs as the AGIPD together with test structures have been
                      irradiated at the beamline P11 of PETRA III with 8 keV and
                      12 keV monoenergetic X-rays to dose values up to 10 MGy. The
                      radiation hardness of the AGIPD sensor has been proven and
                      all electrical properties are within specification before
                      and after irradiation. In addition, the oxide-charge density
                      and surface-current density from test structures have been
                      characterized as function of the X-ray dose and compared to
                      previous measurements for test structures produced by four
                      vendors.},
      cin          = {DOOR / FS-DS / UNI/EXP / FS-PE},
      ddc          = {610},
      cid          = {I:(DE-H253)HAS-User-20120731 / I:(DE-H253)FS-DS-20120731 /
                      $I:(DE-H253)UNI_EXP-20120731$ / I:(DE-H253)FS-PE-20120731},
      pnm          = {PETRA Beamline P11 (POF2-54G14)},
      pid          = {G:(DE-H253)POF2-P11-20130405},
      experiment   = {EXP:(DE-H253)P-P11-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000340036100022},
      doi          = {10.1088/1748-0221/9/05/C05022},
      url          = {https://bib-pubdb1.desy.de/record/172372},
}