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@ARTICLE{Gorbenko:166883,
      author       = {Gorbenko, V. and Krasnikov, A. and Mihokova, E. and Nikl,
                      M. and Zazubovich, S. and Zorenko, Yu.},
      title        = {{P}hotoluminescence and excited state structure in
                      ${B}i^{3+}$-doped ${L}u_{2}{S}i{O}_{5}$ single crystalline
                      films},
      journal      = {Journal of luminescence},
      volume       = {134},
      issn         = {1872-7883},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {DESY-2014-01681},
      pages        = {469–476},
      year         = {2013},
      note         = {(c) Elsevier B.V.; Post referee fulltext in progress;
                      Embargo 12 months from publication},
      abstract     = {Single crystalline films of Lu2SiO5:Bi, prepared by the
                      liquid phase epitaxy method from the melt-solution based on
                      Bi2O3 flux, are studied at 4.2–350 K by the time-resolved
                      spectroscopy methods under excitation in the 2.4–6.2 eV
                      energy range. An intense dominant ultraviolet (≈3.5 eV)
                      luminescence of Lu2SiO5:Bi is shown to arise from the
                      radiative decay of the metastable and radiative minima of
                      the triplet relaxed excited state (RES) of Bi3+ centers
                      which are related to the 3P0 and 3P1 levels of a free Bi3+
                      ion, respectively. At T<50 K, the radiative transitions from
                      the metastable minima mainly take place. Thermally
                      stimulated non-radiative transitions between the metastable
                      and radiative minima of the triplet RES appear at T>50 K in
                      the temperature evolution of the emission spectrum and decay
                      kinetics. The excitation bands of the ultraviolet emission,
                      located at 4.2 eV, 5.03 eV, and 5.95 eV, are assigned to the
                      1S0→3P1, 1S0→3P2, and 1S0→1P1 transitions of a free
                      Bi3+ ion, respectively. The phenomenological model is
                      proposed to describe the excited-state dynamics of Bi3+
                      centers in Lu2SiO5:Bi. Characteristic parameters of the
                      triplet RES, in particular the energy separation between the
                      excited states and the rates of the radiative and
                      non-radiative transitions from these states, are determined.
                      Much weaker ≈3.3 eV emission is ascribed to the Bi3+ ions
                      located in the Lu2 lattice sites. Weak broad ≈2.2 eV and
                      ≈2.3 eV emission bands are assumed to arise from the
                      Bi3+-related localized excitons.},
      cin          = {DOOR},
      ddc          = {530},
      cid          = {I:(DE-H253)HAS-User-20120731},
      pnm          = {DORIS Beamline I (POF2-54G13) / FS-Proposal: I-20110938 EC
                      (I-20110938-EC) / CALIPSO - Coordinated Access to
                      Lightsources to Promote Standards and Optimization (312284)},
      pid          = {G:(DE-H253)POF2-I-20130405 / G:(DE-H253)I-20110938-EC /
                      G:(EU-Grant)312284},
      experiment   = {EXP:(DE-H253)D-I-20150101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000313393300076},
      doi          = {10.1016/j.jlumin.2012.07.043},
      url          = {https://bib-pubdb1.desy.de/record/166883},
}