Home > Publications database > Surface morphology of ultrathin $hex-Pr_{2}O-{3}$ films on Si(1 1 1) > print

001     166723
005     20250730152304.0
024 7 _ |a 10.1088/0022-3727/46/28/285306
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024 7 _ |a 1361-6463
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024 7 _ |a 0262-8171
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100 1 _ |a Wilkens, Henrik
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245 _ _ |a Surface morphology of ultrathin $hex-Pr_{2}O-{3}$ films on Si(1 1 1)
260 _ _ |a Bristol
|c 2013
|b IOP Publ.
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520 _ _ |a In this work, the morphology of the surface of hexagonal Pr2O3(0 0 0 1) films grown onSi(1 1 1) is studied by high-resolution low-energy electron diffraction combined with spotprofile analysis. For this purpose, praseodymia films prepared by molecular beam epitaxywere capped with protecting amorphous germanium films. After removal of the capping layersdue to heating in diluted oxygen atmosphere the surface properties of the oxide film wereinvestigated in situ with Auger electron spectroscopy and spot profile analysis low energyelectron diffraction. The removal of the capping layer has no impact on the hexagonalPr2O3(0 0 0 1) film structure which is shown by x-ray diffraction. Surface sensitive electrondiffraction confirms that the surface of the oxide film has hexagonal structure. Diffraction spotprofile analysis shows that the film surface has grain structure without any mosaic spread dueto the negligible lateral lattice mismatch between hexagonal Pr2O3(0 0 0 1) and Si(1 1 1). Inaddition, single atomic steps with complete bulk unit cell height are present at the surface. Thedensity of the atomic steps is small pointing again to the high quality of the surface ofhexagonal Pr2O3 films compared to cubic Pr2O3 films grown on Si(1 1 1).
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