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@PHDTHESIS{Wunstorf:153817,
author = {Wunstorf, Renate},
title = {{S}ystematische {U}ntersuchungen zur {S}trahlenresistenz
von {S}ilizium-{D}etektoren für die {V}erwendung in
{H}ochenergiephysik-{E}xperimenten},
school = {University of Hamburg},
type = {Dr.},
address = {Hamburg},
reportid = {DESY-2013-00725},
year = {1992},
note = {Notional starting date. The scanned file is too big to be
uploaded; University of Hamburg, Diss., 1992},
abstract = {The very intense radiation fields connected with the high
energy and the high luminosityof future colliding beam
machines (LHC, SSC) make the radiation hardness of all
detectorcomponents an urgent requirement. In this thesis the
radiation hardness of silicondetectors in high energy
physics experiments was investigated systematically. Because
ofthe mixed radiation field the particle and energy
dependence were especially studied withmonoenergetic
particles. These data show that the bulk damage corresponds
independentlyof the particle type to the damage functions of
the non ionizing energy loss, if theenergy of the energy of
the primary knock-on atom is above a threshold value. In
mostapplications the damage effects are dominated by the
neutron induced bulk damage, andthe damage efficiency of the
expected neutron spectrum corresponds to that of 1
MeVneutrons. Accordingly the damage functions were used for
the normalization of differentradiation fields to 1MeV
neutrons. With respect to the detector performance
detailedmeasurements of the change in the effective donor
concentration, the leakage current increaseand charge
collection deficiency were investigated as function of the
particle fluenceand the time after irradiation. Special
emphasis was put on the self annealing effects atroom
temperature in order to separate the respective damage
generation and its subsequentself annealing. The change in
the effective donor concentration is caused by donorand
acceptor removal and radiation induced acceptor like
centers. For n-type silicon thisleads to the conversion to
p-type material, which was here, for the first time, proved
withshort ranged a-particles. Also a modification of defects
was observed during the long termself annealing leading to a
further creation of acceptor like centers. The radiation
inducedleakage current depends on the conduction type.
Taking the self annealing into accountthe current increase
in long term exposure is governed by a damage rate of
4.10-17 Acm-1•The charge collection efficiency for mip's
was calculated from the electron and hole trapping,which was
studied separately. The analysed results were discussed with
respect toa long term behaviour in the intense radiation
field of a high energy physics experiment.Based on the
present results this discussion indicates that the radiation
hardness of silicondetectors is sufficiently high to ensure
operability for applications presently considered forfuture
colliding beam machines.},
keywords = {Dissertation (GND)},
cin = {H1},
cid = {I:(DE-H253)H1-20120806},
pnm = {Experiments at HERA (H1) (POF2-511)},
pid = {G:(DE-H253)POF2-HERA-Exp.-(H1)-20130405},
experiment = {EXP:(DE-588)4443767-5},
typ = {PUB:(DE-HGF)11},
url = {https://bib-pubdb1.desy.de/record/153817},
}