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@MASTERSTHESIS{Neubueser:152330,
      author       = {Neubueser, Coralie},
      title        = {{I}mpact of {I}rradiations by {P}rotons with different
                      {E}nergies on {S}ilicon {S}ensors},
      issn         = {1435-8085},
      school       = {University of Hamburg},
      type         = {MS},
      address      = {Hamburg},
      publisher    = {DESY},
      reportid     = {DESY-2013-00180, DESY-THESIS-2013-021},
      series       = {DESY-THESIS},
      pages        = {125},
      year         = {2013},
      note         = {University of Hamburg, Masterarbeit, 2013},
      abstract     = {In the frame of the CMS tracker upgrade campaign the
                      radiation damage of oxygen- rich n-type silicon pad diodes
                      induced by 23 MeV and 23 GeV protons was investigated. The
                      diodes were manufactured by Hamamatsu Photonics. After
                      irradiation with 1 MeV neutron equivalent fluences between 1
                      × $10^11$ cm−2 and 1.5 × $10^15$ cm−2, the sensors
                      were electrically characterized by means of
                      capacitance-voltage (CV) and current-voltage (IV)
                      measurements. Current pulses recorded by the Transient
                      Current Technique (TCT) and Charge Collection Efficiency
                      (CCE) measurements show a dependence of the bulk damage on
                      the proton energy.At a fluence of Φeq ≈ 3 × $10^14$
                      cm−2 oxygen-rich n-type diodes demonstrate clear Space
                      Charge Sign Inversion (SCSI) after 23 MeV proton
                      irradiation. This effect does not appear after the
                      irradiation with 23 GeV protons. Moreover, RD50 pad diodes
                      were irradiated with 23 MeV protons, electrically
                      characterized and compared to results obtained after 23 GeV
                      irradiations. Our previous observation on the energy
                      dependence of the radiation damage could be confirmed. In
                      order to get a deeper understanding of the differences of
                      the radiation induced defects, the Deep Level Transient
                      Spectroscopy (DLTS) and Thermally Stimulated Current
                      Technique (TSC) were utilized. Defects with impact on the
                      space charge could be identified and characterized and it
                      was possible to find some hints for the reason of the SCSI
                      after 23 MeV proton irradiation. Moreover, a dependence on
                      the oxygen concentration of the sensors could be observed.},
      keywords     = {Unveröffentlichte Hochschulschrift (GND)},
      cin          = {UNI/EXP / CMS},
      cid          = {$I:(DE-H253)UNI_EXP-20120731$ / I:(DE-H253)CMS-20120731},
      pnm          = {Experiments at LHC (CMS) (POF2-512) / Facility (machine)
                      LHC (POF2-LHC-20130405)},
      pid          = {G:(DE-H253)POF2-LHC-Exp.-(CMS)-20130405 /
                      G:(DE-H253)POF2-LHC-20130405},
      experiment   = {EXP:(DE-H253)LHC-Exp-CMS-20150101 /
                      EXP:(DE-H253)LHC(machine)-20150101},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)19 / PUB:(DE-HGF)15},
      doi          = {10.3204/DESY-THESIS-2013-021},
      url          = {https://bib-pubdb1.desy.de/record/152330},
}