| Identifier | G:(DE-H253)II-20042030 |
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Journal Article
On the various impact of chemical composition and elastic strain in SiGe nanoscale islands to the diffuse x-ray scattering
Physica / E 32, 69 (2006) [10.1016/j.physe.2005.12.016]
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Asymmetric Correlation Function Describing the Positional Ordering of LPE SiGe Nanoscale Islands
Physical review / B 71(11), 115323 (2005) [10.1103/PhysRevB.71.115323]
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Journal Article
Diffuse X-Ray Scattering of InGaAs/GaAs Quantum Dots
Physica / E 21, 684 (2004) [10.1016/j.physe.2003.11.107]
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Journal Article
Lateral correlation of SiGe Stranski-Krastanow islands on silicon as probed by high resolution x-ray diffraction
Journal of applied physics 96, 1959 (2004) [10.1063/1.1772883]
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Vertical composition gradient in InGaAs/GaAs alloy quantum dots as revealed by high resolution x-ray diffraction
Applied physics letters 85, 3062 (2004) [10.1063/1.1803938]
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Lateral short range ordering of step bunches in MOCVD grown InGaAs/GaAs superlattices
Journal of applied physics 95, 1736 (2004) [10.1063/1.1640786]
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Aspect ratio of LPE-SiGe/Si(001) islands as probed by high resolution x-ray diffraction
Journal of applied physics 96, 1447 (2004) [10.1063/1.1763994]
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SiGe/Si(001) Stranski-Krastanov islands by liquid-phase epitaxy: Diffuse x-ray scattering versus growth observations
Physical review / B 69(7), 075317 (2004) [10.1103/PhysRevB.69.075317]
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