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Embargoed OpenAccess [PUBDB-2015-05171] Journal Article
et al
Formation and Movement of Cationic Defects During Forming and Resistive Switching in $\mathrm{SrTiO_3}$ Thin Film Devices
The resistance switching phenomenon in many transition metal oxides is described by ion motion leading to the formation of oxygen-deficient, highly electron-doped filaments. In this paper, the interface and subinterface region of electroformed and switched metal–insulator–metal structures fabricated from a thin Fe-doped SrTiO3 (STO) film on n-conducting Nb-doped SrTiO3 crystals are investigated by photoemission electron microscopy, transmission electron microscopy, and hard X-ray photoelectron spectroscopy in order to gain a deeper understanding of cation movement in this specific system. [...]
Published on 2015-05-18. Available in OpenAccess from 2016-05-18.: Download fulltextPDF Download fulltextPDF (PDFA); Restricted: Download fulltextPDF Download fulltextPDF (PDFA);
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