# FZJuel

 2015-11-2708:08 [PUBDB-2015-05171] Journal Article et al Formation and Movement of Cationic Defects During Forming and Resistive Switching in $\mathrm{SrTiO_3}$ Thin Film Devices Advanced functional materials 25(40), 6360 - 6368 (2015) [10.1002/adfm.201500851]   The resistance switching phenomenon in many transition metal oxides is described by ion motion leading to the formation of oxygen-deficient, highly electron-doped filaments. In this paper, the interface and subinterface region of electroformed and switched metal–insulator–metal structures fabricated from a thin Fe-doped SrTiO3 (STO) film on n-conducting Nb-doped SrTiO3 crystals are investigated by photoemission electron microscopy, transmission electron microscopy, and hard X-ray photoelectron spectroscopy in order to gain a deeper understanding of cation movement in this specific system. [...] Published on 2015-05-18. Available in OpenAccess from 2016-05-18.: PDF PDF (PDFA); Restricted: PDF PDF (PDFA);